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- 22.993412 accessdate "2015-06-05".
- 22.993412 date "April 2002".
- 22.993412 doi "10.1109/22.993412".
- 22.993412 first2 "S.".
- 22.993412 first3 "P.".
- 22.993412 first4 "L.P.B.".
- 22.993412 first5 "S.A.".
- 22.993412 first6 "G.E.".
- 22.993412 isCitedBy Linda_P.B._Katehi.
- 22.993412 issue "4".
- 22.993412 journal "IEEE Transactions on Microwave Theory and Techniques".
- 22.993412 last1 "Zhenqiang Ma".
- 22.993412 last2 "Mohammadi".
- 22.993412 last3 "Bhattacharya".
- 22.993412 last4 "Katehi".
- 22.993412 last5 "Alterovitz".
- 22.993412 last6 "Ponchak".
- 22.993412 pages "1101–1108".
- 22.993412 title "A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor".
- 22.993412 url "http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=993412&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D993412".
- 22.993412 volume "50".