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- Q7543959 subject Q6464799.
- Q7543959 subject Q8728768.
- Q7543959 subject Q8728791.
- Q7543959 subject Q9805826.
- Q7543959 abstract "Smart cut is a technological process that enables the transfer of very fine layers of crystalline silicon material onto a mechanical support. It was invented by Michel Bruel of CEA-Leti, and is protected by US patent 5374564. The application of this technological procedure is mainly in the production of silicon-on-insulator (SOI) wafer substrates.The role of SOI is to electronically insulate a fine layer of monocrystalline silicon from the rest of the silicon wafer; an ultra-thin silicon film is transferred to a mechanical support, thereby introducing an intermediate, insulating layer. Semiconductor manufacturers can then fabricate integrated circuits on the top layer of the SOI wafers using the same processes they would use on plain silicon wafers. The sequence of illustrations pictorially describes the process involved in fabricating SOI wafers using the smart cut technology.".
- Q7543959 thumbnail Smart_Cut_SOI_Wafer_Manufacturing_Schema.svg?width=300.
- Q7543959 wikiPageWikiLink Q1023249.
- Q7543959 wikiPageWikiLink Q11456.
- Q7543959 wikiPageWikiLink Q1478788.
- Q7543959 wikiPageWikiLink Q267131.
- Q7543959 wikiPageWikiLink Q3488995.
- Q7543959 wikiPageWikiLink Q6464799.
- Q7543959 wikiPageWikiLink Q670.
- Q7543959 wikiPageWikiLink Q754943.
- Q7543959 wikiPageWikiLink Q80831.
- Q7543959 wikiPageWikiLink Q8728768.
- Q7543959 wikiPageWikiLink Q8728791.
- Q7543959 wikiPageWikiLink Q9805826.
- Q7543959 comment "Smart cut is a technological process that enables the transfer of very fine layers of crystalline silicon material onto a mechanical support. It was invented by Michel Bruel of CEA-Leti, and is protected by US patent 5374564.".
- Q7543959 label "Smart cut".
- Q7543959 depiction Smart_Cut_SOI_Wafer_Manufacturing_Schema.svg.