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- Q4299328 subject Q7153785.
- Q4299328 subject Q8728768.
- Q4299328 abstract "The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965 by Bruce Deal and Andrew Grove, of Fairchild Semiconductor.".
- Q4299328 thumbnail Deal-Grove.png?width=300.
- Q4299328 wikiPageExternalLink thermaloxide.html.
- Q4299328 wikiPageWikiLink Q1096013.
- Q4299328 wikiPageWikiLink Q1130571.
- Q4299328 wikiPageWikiLink Q11432.
- Q4299328 wikiPageWikiLink Q15119237.
- Q4299328 wikiPageWikiLink Q1549368.
- Q4299328 wikiPageWikiLink Q1570432.
- Q4299328 wikiPageWikiLink Q163214.
- Q4299328 wikiPageWikiLink Q177974.
- Q4299328 wikiPageWikiLink Q190474.
- Q4299328 wikiPageWikiLink Q267131.
- Q4299328 wikiPageWikiLink Q285804.
- Q4299328 wikiPageWikiLink Q36534.
- Q4299328 wikiPageWikiLink Q39552.
- Q4299328 wikiPageWikiLink Q432929.
- Q4299328 wikiPageWikiLink Q43533.
- Q4299328 wikiPageWikiLink Q50690.
- Q4299328 wikiPageWikiLink Q5788637.
- Q4299328 wikiPageWikiLink Q5962.
- Q4299328 wikiPageWikiLink Q6485344.
- Q4299328 wikiPageWikiLink Q670.
- Q4299328 wikiPageWikiLink Q7153785.
- Q4299328 wikiPageWikiLink Q82682.
- Q4299328 wikiPageWikiLink Q83327.
- Q4299328 wikiPageWikiLink Q849699.
- Q4299328 wikiPageWikiLink Q856634.
- Q4299328 wikiPageWikiLink Q8728768.
- Q4299328 wikiPageWikiLink Q904041.
- Q4299328 comment "The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965 by Bruce Deal and Andrew Grove, of Fairchild Semiconductor.".
- Q4299328 label "Deal–Grove model".
- Q4299328 depiction Deal-Grove.png.