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- jjap.46.2172 doi "10.1143/JJAP.46.2172".
- jjap.46.2172 first1 "In-Sung".
- jjap.46.2172 first2 "Kyong-Rae".
- jjap.46.2172 first3 "Sangsul".
- jjap.46.2172 first4 "Jinho".
- jjap.46.2172 isCitedBy Resistive_random-access_memory.
- jjap.46.2172 issue "4.0".
- jjap.46.2172 journal "Japanese Journal of Applied Physics".
- jjap.46.2172 last1 "Park".
- jjap.46.2172 last2 "Kim".
- jjap.46.2172 last3 "Lee".
- jjap.46.2172 last4 "Ahn".
- jjap.46.2172 pages "2172".
- jjap.46.2172 title "Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides".
- jjap.46.2172 volume "46".
- jjap.46.2172 year "2007".