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- jjap.34.l1517 bibcode "1995JaJAP..34L1517A".
- jjap.34.l1517 doi "10.1143/JJAP.34.L1517".
- jjap.34.l1517 first1 "I.".
- jjap.34.l1517 first2 "H.".
- jjap.34.l1517 first3 "S.".
- jjap.34.l1517 first4 "H.".
- jjap.34.l1517 first5 "T.".
- jjap.34.l1517 isCitedBy Gallium_nitride.
- jjap.34.l1517 journal "Japanese Journal of Applied Physics".
- jjap.34.l1517 last1 "Akasaki".
- jjap.34.l1517 last2 "Amano".
- jjap.34.l1517 last3 "Sota".
- jjap.34.l1517 last4 "Sakai".
- jjap.34.l1517 last5 "Tanaka".
- jjap.34.l1517 last6 "Masayoshikoike".
- jjap.34.l1517 pages "L1517".
- jjap.34.l1517 title "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device".
- jjap.34.l1517 volume "34".
- jjap.34.l1517 year "1995".