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- 1.96549 bibcode "1986ApPhL..48..353A".
- 1.96549 doi "10.1063/1.96549".
- 1.96549 first1 "H.".
- 1.96549 first2 "N.".
- 1.96549 first3 "I.".
- 1.96549 first4 "Y.".
- 1.96549 isCitedBy Gallium_nitride.
- 1.96549 issue "5".
- 1.96549 journal "Applied Physics Letters".
- 1.96549 last1 "Amano".
- 1.96549 last2 "Sawaki".
- 1.96549 last3 "Akasaki".
- 1.96549 last4 "Toyoda".
- 1.96549 pages "353".
- 1.96549 title "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer".
- 1.96549 volume "48".
- 1.96549 year "1986".