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- 1.2715002 doi "10.1063/1.2715002".
- 1.2715002 first1 "D.".
- 1.2715002 first2 "D. J.".
- 1.2715002 first3 "I.".
- 1.2715002 first4 "F.".
- 1.2715002 first5 "R.".
- 1.2715002 first6 "S.".
- 1.2715002 first7 "H.".
- 1.2715002 isCitedBy Resistive_random-access_memory.
- 1.2715002 issue "12".
- 1.2715002 journal "Applied Physics Letters".
- 1.2715002 last1 "Lee".
- 1.2715002 last2 "Seong".
- 1.2715002 last3 "Jo".
- 1.2715002 last4 "Xiang".
- 1.2715002 last5 "Dong".
- 1.2715002 last6 "Oh".
- 1.2715002 last7 "Hwang".
- 1.2715002 pages "122104".
- 1.2715002 title "Resistance switching of copper doped MoO[sub x] films for nonvolatile memory applications".
- 1.2715002 volume "90".
- 1.2715002 year "2007".