Matches in DBpedia 2016-04 for { <http://doi.org/10.1063/1.116180> ?p ?o }
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- 1.116180 date "1996-04-29".
- 1.116180 doi "10.1063/1.116180".
- 1.116180 first "J.".
- 1.116180 first2 "Z. G.".
- 1.116180 first3 "L. Y.".
- 1.116180 first4 "C. B.".
- 1.116180 first5 "M.".
- 1.116180 first6 "S. W.".
- 1.116180 isCitedBy Lanying_Lin.
- 1.116180 issn "0003-6951".
- 1.116180 issue "18".
- 1.116180 journal "Applied Physics Letters".
- 1.116180 last "Wu".
- 1.116180 last2 "Wang".
- 1.116180 last3 "Lin".
- 1.116180 last4 "Han".
- 1.116180 last5 "Zhang".
- 1.116180 last6 "Bai".
- 1.116180 pages "2550–2552".
- 1.116180 title "Influence of the semi‐insulating GaAs Schottky pad on the Schottky barrier in the active layer".
- 1.116180 url "http://scitation.aip.org/content/aip/journal/apl/68/18/10.1063/1.116180".
- 1.116180 volume "68".