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- Time-dependent_gate_oxide_breakdown abstract "Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposite to immediate breakdown, which is caused by strong electric field). The breakdown is caused by formation of a conducting path through the gate oxide to substrate due to electron tunneling current, when MOSFETs are operated close to or beyond their specified operating voltages.".
- Time-dependent_gate_oxide_breakdown wikiPageID "19649139".
- Time-dependent_gate_oxide_breakdown wikiPageLength "1725".
- Time-dependent_gate_oxide_breakdown wikiPageOutDegree "6".
- Time-dependent_gate_oxide_breakdown wikiPageRevisionID "637553587".
- Time-dependent_gate_oxide_breakdown wikiPageWikiLink Category:Semiconductor_device_defects.
- Time-dependent_gate_oxide_breakdown wikiPageWikiLink Electrical_breakdown.
- Time-dependent_gate_oxide_breakdown wikiPageWikiLink Gate_oxide.
- Time-dependent_gate_oxide_breakdown wikiPageWikiLink MOSFET.
- Time-dependent_gate_oxide_breakdown wikiPageWikiLink Quantum_tunnelling.
- Time-dependent_gate_oxide_breakdown wikiPageWikiLink Wafer_(electronics).
- Time-dependent_gate_oxide_breakdown wikiPageWikiLinkText "Time-dependent gate oxide breakdown".
- Time-dependent_gate_oxide_breakdown wikiPageWikiLinkText "time-dependent gate oxide breakdown".
- Time-dependent_gate_oxide_breakdown wikiPageUsesTemplate Template:Electronics-stub.
- Time-dependent_gate_oxide_breakdown wikiPageUsesTemplate Template:Reflist.
- Time-dependent_gate_oxide_breakdown subject Category:Semiconductor_device_defects.
- Time-dependent_gate_oxide_breakdown hypernym Mechanism.
- Time-dependent_gate_oxide_breakdown type Organisation.
- Time-dependent_gate_oxide_breakdown type Defect.
- Time-dependent_gate_oxide_breakdown type Semiconductor.
- Time-dependent_gate_oxide_breakdown comment "Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposite to immediate breakdown, which is caused by strong electric field).".
- Time-dependent_gate_oxide_breakdown label "Time-dependent gate oxide breakdown".
- Time-dependent_gate_oxide_breakdown sameAs Q7804816.
- Time-dependent_gate_oxide_breakdown sameAs m.04n3ntw.
- Time-dependent_gate_oxide_breakdown sameAs Q7804816.
- Time-dependent_gate_oxide_breakdown wasDerivedFrom Time-dependent_gate_oxide_breakdown?oldid=637553587.
- Time-dependent_gate_oxide_breakdown isPrimaryTopicOf Time-dependent_gate_oxide_breakdown.