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- Plasma_ashing abstract "In semiconductor manufacturing plasma ashing is the process of removing the photoresist from an etched wafer. Using a plasma source, a monatomic reactive species is generated. Oxygen or fluorine are the most common reactive species. The reactive species combines with the photoresist to form ash which is removed with a vacuum pump.Typically, monatomic (single atom) oxygen plasma is created by exposing oxygen gas at a low pressure (O2) to high power radio waves, which ionise it. This process is done under vacuum in order to create a plasma. As the plasma is formed, many free radicals are created which could damage the wafer. Newer, smaller circuitry is increasingly susceptible to these particles. Originally, plasma was generated in the process chamber, but as the need to get rid of free radicals has increased, many machines now use a downstream plasma configuration, where plasma is formed remotely and the desired particles are channeled to the wafer. This allows electrically charged particles time to recombine before they reach the wafer surface, and prevents damage to the wafer surface.Two forms of plasma ashing are typically performed on wafers. High temperature ashing, or stripping, is performed to remove as much photo resist as possible, while the \"descum\" process is used to remove residual photo resist in trenches. The main difference between the two processes is the temperature the wafer is exposed to while in an ashing chamber.Monatomic oxygen is electrically neutral and although it does recombine during the channeling, it does so at a slower rate than the positively or negatively charged free radicals, which attract one another. This means that when all of the free radicals have recombined, there is still a portion of the active species available for process. Because a large portion of the active species is lost to recombination, process times may take longer. To some extent, these longer process times can be mitigated by increasing the temperature of the reaction area.de:Plasmaätzen".
- Plasma_ashing wikiPageID "23731".
- Plasma_ashing wikiPageLength "2325".
- Plasma_ashing wikiPageOutDegree "12".
- Plasma_ashing wikiPageRevisionID "501765510".
- Plasma_ashing wikiPageWikiLink Category:Plasma_processing.
- Plasma_ashing wikiPageWikiLink Category:Semiconductor_device_fabrication.
- Plasma_ashing wikiPageWikiLink Etching_(microfabrication).
- Plasma_ashing wikiPageWikiLink Fluorine.
- Plasma_ashing wikiPageWikiLink Monatomic_gas.
- Plasma_ashing wikiPageWikiLink Oxygen.
- Plasma_ashing wikiPageWikiLink Photoresist.
- Plasma_ashing wikiPageWikiLink Plasma_(physics).
- Plasma_ashing wikiPageWikiLink Plasma_cleaning.
- Plasma_ashing wikiPageWikiLink Radical_(chemistry).
- Plasma_ashing wikiPageWikiLink Semiconductor.
- Plasma_ashing wikiPageWikiLink Vacuum_pump.
- Plasma_ashing wikiPageWikiLinkText "Plasma ashing".
- Plasma_ashing wikiPageWikiLinkText "ash".
- Plasma_ashing wikiPageWikiLinkText "ashing".
- Plasma_ashing wikiPageWikiLinkText "plasma ashing".
- Plasma_ashing wikiPageWikiLinkText "resist strip and surface preparation".
- Plasma_ashing wikiPageWikiLinkText "surface preparation".
- Plasma_ashing wikiPageUsesTemplate Template:Chem-stub.
- Plasma_ashing wikiPageUsesTemplate Template:Unreferenced.
- Plasma_ashing subject Category:Plasma_processing.
- Plasma_ashing subject Category:Semiconductor_device_fabrication.
- Plasma_ashing hypernym Process.
- Plasma_ashing type Election.
- Plasma_ashing type Physic.
- Plasma_ashing type Process.
- Plasma_ashing type Redirect.
- Plasma_ashing type Semiconductor.
- Plasma_ashing comment "In semiconductor manufacturing plasma ashing is the process of removing the photoresist from an etched wafer. Using a plasma source, a monatomic reactive species is generated. Oxygen or fluorine are the most common reactive species. The reactive species combines with the photoresist to form ash which is removed with a vacuum pump.Typically, monatomic (single atom) oxygen plasma is created by exposing oxygen gas at a low pressure (O2) to high power radio waves, which ionise it.".
- Plasma_ashing label "Plasma ashing".
- Plasma_ashing sameAs Q17075286.
- Plasma_ashing sameAs Plasma_ashen.
- Plasma_ashing sameAs m.05xr4.
- Plasma_ashing sameAs Q17075286.
- Plasma_ashing wasDerivedFrom Plasma_ashing?oldid=501765510.
- Plasma_ashing isPrimaryTopicOf Plasma_ashing.