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- Optical_proximity_correction abstract "Optical proximity correction (OPC) is a photolithography enhancement technique commonly used to compensate for image errors due to diffraction or process effects. The need for OPC is seen mainly in the making of semiconductor devices and is due to the limitations of light to maintain the edge placement integrity of the original design, after processing, into the etched image on the silicon wafer. These projected images appear with irregularities such as line widths that are narrower or wider than designed, these are amenable to compensation by changing the pattern on the photomask used for imaging. Other distortions such as rounded corners are driven by the resolution of the optical imaging tool and are harder to compensate for. Such distortions, if not corrected for, may significantly alter the electrical properties of what was being fabricated. Optical proximity correction corrects these errors by moving edges or adding extra polygons to the pattern written on the photomask. This may be driven by pre-computed look-up tables based on width and spacing between features (known as rule based OPC) or by using compact models to dynamically simulate the final pattern and thereby drive the movement of edges, typically broken into sections, to find the best solution, (this is known as model based OPC). The objective is to reproduce, as well as possible, the original layout drawn by the designer in the silicon wafer.The two most visible benefits of OPC are correcting linewidth differences seen between features in regions of different density (e.g., center vs. edge of an array, or nested vs. isolated lines), and line end shortening (e.g., gate overlap on field oxide). For the former case, this may be used together with resolution enhancement technologies such as scattering bars (sub-resolution lines placed adjacent to resolvable lines) together with linewidth adjustments. For the latter case, \"dog-ear\" (serif or hammerhead) features may be generated at the line end in the design. OPC has a cost impact on photomask fabrication whereby the mask write time is related to the complexity of the mask and data-files and similarly mask inspection for defects takes longer as the finer edge control requires a smaller spot size.".
- Optical_proximity_correction thumbnail Optical_proximity_correction.png?width=300.
- Optical_proximity_correction wikiPageExternalLink gennari.
- Optical_proximity_correction wikiPageID "3263872".
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- Optical_proximity_correction wikiPageOutDegree "24".
- Optical_proximity_correction wikiPageRevisionID "697449667".
- Optical_proximity_correction wikiPageWikiLink Angular_resolution.
- Optical_proximity_correction wikiPageWikiLink Category:Lithography_(microfabrication).
- Optical_proximity_correction wikiPageWikiLink Chemical-mechanical_planarization.
- Optical_proximity_correction wikiPageWikiLink Computational_lithography.
- Optical_proximity_correction wikiPageWikiLink Degree_of_coherence.
- Optical_proximity_correction wikiPageWikiLink Diffraction.
- Optical_proximity_correction wikiPageWikiLink Electron-beam_lithography.
- Optical_proximity_correction wikiPageWikiLink Electronic_design_automation.
- Optical_proximity_correction wikiPageWikiLink File:Optical_proximity_correction.png.
- Optical_proximity_correction wikiPageWikiLink File:Undersized_contact.png.
- Optical_proximity_correction wikiPageWikiLink Mask_inspection.
- Optical_proximity_correction wikiPageWikiLink Multiple_patterning.
- Optical_proximity_correction wikiPageWikiLink Numerical_aperture.
- Optical_proximity_correction wikiPageWikiLink Partial_coherence_factor.
- Optical_proximity_correction wikiPageWikiLink Phase-shift_mask.
- Optical_proximity_correction wikiPageWikiLink Photolithography.
- Optical_proximity_correction wikiPageWikiLink Photomask.
- Optical_proximity_correction wikiPageWikiLink Photoresist.
- Optical_proximity_correction wikiPageWikiLink Plasma_etching.
- Optical_proximity_correction wikiPageWikiLink Proximity_effect_(electron_beam_lithography).
- Optical_proximity_correction wikiPageWikiLink Resolution_enhancement_technologies.
- Optical_proximity_correction wikiPageWikiLink Wavelength.
- Optical_proximity_correction wikiPageWikiLinkText "Optical Proximity Correction".
- Optical_proximity_correction wikiPageWikiLinkText "Optical proximity correction".
- Optical_proximity_correction wikiPageWikiLinkText "optical proximity correction".
- Optical_proximity_correction wikiPageWikiLinkText "ptical proximity correction".
- Optical_proximity_correction subject Category:Lithography_(microfabrication).
- Optical_proximity_correction hypernym Technique.
- Optical_proximity_correction type TopicalConcept.
- Optical_proximity_correction type Process.
- Optical_proximity_correction type Redirect.
- Optical_proximity_correction comment "Optical proximity correction (OPC) is a photolithography enhancement technique commonly used to compensate for image errors due to diffraction or process effects. The need for OPC is seen mainly in the making of semiconductor devices and is due to the limitations of light to maintain the edge placement integrity of the original design, after processing, into the etched image on the silicon wafer.".
- Optical_proximity_correction label "Optical proximity correction".
- Optical_proximity_correction sameAs Q1672829.
- Optical_proximity_correction sameAs Optical_proximity_correction.
- Optical_proximity_correction sameAs Correction_optique_de_proximité.
- Optical_proximity_correction sameAs m.09232f.
- Optical_proximity_correction sameAs Q1672829.
- Optical_proximity_correction wasDerivedFrom Optical_proximity_correction?oldid=697449667.
- Optical_proximity_correction depiction Optical_proximity_correction.png.
- Optical_proximity_correction isPrimaryTopicOf Optical_proximity_correction.