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- Monolayer_doping abstract "Monolayer doping (MLD) is a well controlled, wafer-scale surface doping technique first developed at the University of California, Berkeley, in 2007. This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially at nanoscale, which is not easily obtained by other existing technologies. This technique is currently used for fabricating ultrashallow junctions (USJs) as the heavily doped source/drain (S/D) contacts of metal-oxide-semiconductor field effect transistors (MOSFETs) as well as enabling dopant profiling of nanostructures.This MLD technique utilizes the crystalline nature of semiconductors and its self-limiting surface reaction properties to form highly uniform, self-assembled, covalently bonded dopant-containing monolayers followed by a subsequent annealing step for the incorporation and diffusion of dopants. The monolayer formation reaction is self-limiting, thereby, resulting in the deterministic coverage of dopant atoms on the surface. MLD differs from other conventional doping techniques such as spin-on-dopants (SODs) and gas phase doping techniques in the way of dopant dose control. Such control in MLD is much more precise due to the self-limiting formation of covalently attached dopants on the surface while the SODs just rely on the thickness control of the spin-on oxide and the gas phase technique depends on the control of dopant gas flow rate; therefore, the excellent dose control in MLD can yield the exact tuning of the resulting dopant profile. Compared to ion-implantation, MLD does not involve the energetic introduction of dopant species into the semiconductor lattice where crystal damages are induced. In the case of implantation, defects such as interstitials and vacancies are inevitably generated, which interact with the dopants to further broaden the junction profile. This is known as the transient-enhanced diffusion (TED), which limits the formation of good quality of USJs. Also, stochastic variation in the dopant positioning and sever stoichiometric imbalance are thus induced for binary and tertiary compound semiconductors by the implantation techniques. In contrast, all MLD dopant atoms are thermally diffused from the crystal surface to the bulk and the dopant profile can be easily controlled by the thermal budget. Since the MLD system can be classified as a limited source model, this is desirable for controlled USJ fabrication with high uniformity and low stochastic variation. Combined with the excellent dopant dose uniformity and coverage in MLD, it is especially attractive for doping nonplanar devices such as fin-FETs and nanowires. As a result, high quality sub-5 nm ultra-shallow junction has been demonstrated in silicon via the use of this MLD technique. Compared to low-energy ion-implantation into a screening film followed by in-diffusion, the MLD technique requires a lower thermal budget and allows conformal doping on topographic features.".
- Monolayer_doping wikiPageID "28559987".
- Monolayer_doping wikiPageLength "8561".
- Monolayer_doping wikiPageOutDegree "7".
- Monolayer_doping wikiPageRevisionID "695075856".
- Monolayer_doping wikiPageWikiLink Annealing_(metallurgy).
- Monolayer_doping wikiPageWikiLink Category:Semiconductor_device_fabrication.
- Monolayer_doping wikiPageWikiLink Doping_(semiconductor).
- Monolayer_doping wikiPageWikiLink Nanoscopic_scale.
- Monolayer_doping wikiPageWikiLink Semiconductor.
- Monolayer_doping wikiPageWikiLink Silicon.
- Monolayer_doping wikiPageWikiLink Ultrashallow_junction.
- Monolayer_doping wikiPageWikiLinkText "Monolayer doping".
- Monolayer_doping wikiPageUsesTemplate Template:Orphan.
- Monolayer_doping wikiPageUsesTemplate Template:Reflist.
- Monolayer_doping subject Category:Semiconductor_device_fabrication.
- Monolayer_doping type Process.
- Monolayer_doping type Redirect.
- Monolayer_doping type Semiconductor.
- Monolayer_doping comment "Monolayer doping (MLD) is a well controlled, wafer-scale surface doping technique first developed at the University of California, Berkeley, in 2007. This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially at nanoscale, which is not easily obtained by other existing technologies.".
- Monolayer_doping label "Monolayer doping".
- Monolayer_doping sameAs Q6901659.
- Monolayer_doping sameAs m.0cz7_p2.
- Monolayer_doping sameAs Q6901659.
- Monolayer_doping wasDerivedFrom Monolayer_doping?oldid=695075856.
- Monolayer_doping isPrimaryTopicOf Monolayer_doping.