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• Indium_gallium_zinc_oxide abstract "Indium gallium zinc oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O). IGZO thin-film transistor (TFT) is used in the TFT backplane of flat-panel displays (FPDs). IGZO-TFT was developed by Professor Hideo Hosono's group at Tokyo Institute of Technology and Japan Science and Technology Agency (JST) in 2003 (crystalline IGZO-TFT) and in 2004 (amorphous IGZO-TFT). IGZO-TFT has 20–50 times the electron mobility of amorphous silicon, which has often been used in liquid-crystal displays (LCDs) and e-papers. As a result, IGZO-TFT can improve the speed, resolution and size of flat-panel displays. It is thus considered to be one of the most promising thin-film transistors for use in organic light-emitting diode (OLED) displays.IGZO-TFT and its applications are patented by JST. They have been licensed to Samsung Electronics (in 2011) and Sharp (in 2012).In 2012, Sharp was first to start production of LCD panels incorporating IGZO-TFT. Sharp employs IGZO-TFT for smartphones, tablets, 32\" LCD, etc. In these, the aperture ratio of the LCD is improved by up to 20%. Power consumption is improved by LCD idling stop technology, which is possible due to the high mobility and low off current of IGZO-TFT. Sharp has started to release high pixel-density panels for notebook applications. IGZO-TFT is also employed in the 14\" 3,200x1,800 LCD of an ultrabook PC supplied by Fujitsu and a 55\" OLED TV supplied by LG Electronics.IGZO's advantage over zinc oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxide semiconductors. The transistors are slightly photo-sensitive, but the effect becomes significant only in the deep violet to ultra-violet (photon energy above 3 eV) range, offering the possibility of a fully transparent transistor.The current roadblock to large-scale IGZO manufacturing is the synthesis method. The most widely used technique for Transparent Conducting Oxide (TCO) synthesis is Pulsed Laser Deposition (PLD) In PLD, a laser is used to focus on nano-sized spots on solid elemental targets. Laser pulse frequencies are varied between the targets in ratios to control the composition of the film. IGZO can be deposited onto substrates such as quartz, single-crystal silicon, or even plastic due to its ability for low-temperature deposition. The substrates are placed in a PLD vacuum chamber, which controls oxygen pressure in order to ensure favorable electrical properties. After synthesis, the film is annealed, or gradually exposed to air to adjust to the atmosphere.While PLD is a useful and versatile synthesis technique, it requires expensive equipment and plenty of time for each sample to adjust to regular atmospheric conditions. This is not ideal for industrial manufacturing, where large corporations would aim to produce thousands of TFTs each day.Solution Processing is a more cost effective alternative. Specifically, combustion synthesis techniques can be used. Kim et al used a metal nitrate solution with an oxidizer to create an exothermic reaction. One common type of combustion synthesis is spin coating, which involves depositing In and Ga solution layers onto a hot plate and annealing at temperatures roughly between 200 and 400 degrees C, depending on your target composition. The films can be annealed in air, which is a large advantage over PLD.Combustion processing has potential as a new synthesis method, but more research is required to assess its viability. The Bedzyk Group at Northwestern University is currently comparing properties such as the crystallization temperature and electron mobility between IGO films made by PLD and combustion processing.".
• Indium_gallium_zinc_oxide wikiPageID "19887440".
• Indium_gallium_zinc_oxide wikiPageLength "7815".
• Indium_gallium_zinc_oxide wikiPageOutDegree "46".
• Indium_gallium_zinc_oxide wikiPageRevisionID "702996351".
• Indium_gallium_zinc_oxide wikiPageWikiLink Amorphous_silicon.
• Indium_gallium_zinc_oxide wikiPageWikiLink Annealing_(metallurgy).
• Indium_gallium_zinc_oxide wikiPageWikiLink Category:Oxides.
• Indium_gallium_zinc_oxide wikiPageWikiLink Category:Semiconductor_fabrication_materials.
• Indium_gallium_zinc_oxide wikiPageWikiLink Combustion_synthesis.
• Indium_gallium_zinc_oxide wikiPageWikiLink Electron_mobility.
• Indium_gallium_zinc_oxide wikiPageWikiLink Electronic_paper.
• Indium_gallium_zinc_oxide wikiPageWikiLink Electronvolt.
• Indium_gallium_zinc_oxide wikiPageWikiLink Exothermic_process.
• Indium_gallium_zinc_oxide wikiPageWikiLink Flat_panel_display.
• Indium_gallium_zinc_oxide wikiPageWikiLink Fujitsu.
• Indium_gallium_zinc_oxide wikiPageWikiLink Gallium.
• Indium_gallium_zinc_oxide wikiPageWikiLink Hideo_Hosono.
• Indium_gallium_zinc_oxide wikiPageWikiLink Indium.
• Indium_gallium_zinc_oxide wikiPageWikiLink Japan_Science_and_Technology_Agency.
• Indium_gallium_zinc_oxide wikiPageWikiLink LG_Electronics.
• Indium_gallium_zinc_oxide wikiPageWikiLink Liquid-crystal_display.
• Indium_gallium_zinc_oxide wikiPageWikiLink Notebook.
• Indium_gallium_zinc_oxide wikiPageWikiLink OLED.
• Indium_gallium_zinc_oxide wikiPageWikiLink Oxide.
• Indium_gallium_zinc_oxide wikiPageWikiLink Oxygen.
• Indium_gallium_zinc_oxide wikiPageWikiLink Photon_energy.
• Indium_gallium_zinc_oxide wikiPageWikiLink Photosensitivity.
• Indium_gallium_zinc_oxide wikiPageWikiLink Pixel.
• Indium_gallium_zinc_oxide wikiPageWikiLink Pulsed_Laser_Deposition_(PLD).
• Indium_gallium_zinc_oxide wikiPageWikiLink Samsung_Electronics.
• Indium_gallium_zinc_oxide wikiPageWikiLink Semiconductor.
• Indium_gallium_zinc_oxide wikiPageWikiLink Sharp_Corporation.
• Indium_gallium_zinc_oxide wikiPageWikiLink Smartphone.
• Indium_gallium_zinc_oxide wikiPageWikiLink Solution_Processing.
• Indium_gallium_zinc_oxide wikiPageWikiLink Spin_coating.
• Indium_gallium_zinc_oxide wikiPageWikiLink Tablet_computer.
• Indium_gallium_zinc_oxide wikiPageWikiLink Thin-film_transistor.
• Indium_gallium_zinc_oxide wikiPageWikiLink Thyroid_function_tests.
• Indium_gallium_zinc_oxide wikiPageWikiLink Tokyo_Institute_of_Technology.
• Indium_gallium_zinc_oxide wikiPageWikiLink Transistor.
• Indium_gallium_zinc_oxide wikiPageWikiLink Ultrabook.
• Indium_gallium_zinc_oxide wikiPageWikiLink Ultraviolet.
• Indium_gallium_zinc_oxide wikiPageWikiLink Zinc.
• Indium_gallium_zinc_oxide wikiPageWikiLink Zinc_oxide.
• Indium_gallium_zinc_oxide wikiPageWikiLinkText "Indium gallium zinc oxide".
• Indium_gallium_zinc_oxide wikiPageWikiLinkText "TFT IGZO".
• Indium_gallium_zinc_oxide wikiPageWikiLinkText "indium gallium zinc oxide".
• Indium_gallium_zinc_oxide wikiPageUsesTemplate Template:Primary_sources.
• Indium_gallium_zinc_oxide wikiPageUsesTemplate Template:Reflist.
• Indium_gallium_zinc_oxide subject Category:Oxides.
• Indium_gallium_zinc_oxide subject Category:Semiconductor_fabrication_materials.
• Indium_gallium_zinc_oxide hypernym Material.
• Indium_gallium_zinc_oxide type ChemicalCompound.
• Indium_gallium_zinc_oxide type Semiconductor.
• Indium_gallium_zinc_oxide comment "Indium gallium zinc oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O). IGZO thin-film transistor (TFT) is used in the TFT backplane of flat-panel displays (FPDs). IGZO-TFT was developed by Professor Hideo Hosono's group at Tokyo Institute of Technology and Japan Science and Technology Agency (JST) in 2003 (crystalline IGZO-TFT) and in 2004 (amorphous IGZO-TFT).".
• Indium_gallium_zinc_oxide label "Indium gallium zinc oxide".
• Indium_gallium_zinc_oxide sameAs Q1661614.
• Indium_gallium_zinc_oxide sameAs Indium-Gallium-Zink-Oxid.
• Indium_gallium_zinc_oxide sameAs IGZO.
• Indium_gallium_zinc_oxide sameAs IGZO.
• Indium_gallium_zinc_oxide sameAs m.0j261bv.
• Indium_gallium_zinc_oxide sameAs Оксид_индия,_галлия_и_цинка.
• Indium_gallium_zinc_oxide sameAs İndiyum_galyum_çinko_oksit.
• Indium_gallium_zinc_oxide sameAs IGZO.
• Indium_gallium_zinc_oxide sameAs Q1661614.
• Indium_gallium_zinc_oxide sameAs 氧化銦鎵鋅.
• Indium_gallium_zinc_oxide wasDerivedFrom Indium_gallium_zinc_oxide?oldid=702996351.
• Indium_gallium_zinc_oxide isPrimaryTopicOf Indium_gallium_zinc_oxide.