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- Heterostructure-emitter_bipolar_transistor abstract "The Heterojunction-emitter bipolar transistor (HEBT), is a somewhat unique arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier to minority-carrier charge flow from the base. This is important as loss of minority carriers from the base to the emitter degrades analog performance. The main difference of the HEBT from the Heterojunction bipolar transistor (HBT) is that the emitter–base interface is the same as in a bipolar junction transistor (BJT) with the blocking energy gap being moved back into the emitter bulk region.".
- Heterostructure-emitter_bipolar_transistor thumbnail Heterostructure_emitter_bipolar_transistor.jpg?width=300.
- Heterostructure-emitter_bipolar_transistor wikiPageID "8742571".
- Heterostructure-emitter_bipolar_transistor wikiPageLength "2452".
- Heterostructure-emitter_bipolar_transistor wikiPageOutDegree "15".
- Heterostructure-emitter_bipolar_transistor wikiPageRevisionID "551443348".
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Analog_signal.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Bipolar_junction_transistor.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Category:Microwave_technology.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Category:Transistor_types.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Diffusion.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Doping_(semiconductor).
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Epitaxy.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink File:Heterostructure_emitter_bipolar_transistor.jpg.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Graded_emitter.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Heterojunction_bipolar_transistor.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Optoelectronics.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Scanning_ion_mass_spectrometry.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLink Semiconductor_device_fabrication.
- Heterostructure-emitter_bipolar_transistor wikiPageWikiLinkText "Heterostructure-emitter bipolar transistor".
- Heterostructure-emitter_bipolar_transistor wikiPageUsesTemplate Template:Cite_journal.
- Heterostructure-emitter_bipolar_transistor subject Category:Microwave_technology.
- Heterostructure-emitter_bipolar_transistor subject Category:Transistor_types.
- Heterostructure-emitter_bipolar_transistor type Type.
- Heterostructure-emitter_bipolar_transistor type Transistor.
- Heterostructure-emitter_bipolar_transistor type Type.
- Heterostructure-emitter_bipolar_transistor comment "The Heterojunction-emitter bipolar transistor (HEBT), is a somewhat unique arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier to minority-carrier charge flow from the base. This is important as loss of minority carriers from the base to the emitter degrades analog performance.".
- Heterostructure-emitter_bipolar_transistor label "Heterostructure-emitter bipolar transistor".
- Heterostructure-emitter_bipolar_transistor sameAs Q5747796.
- Heterostructure-emitter_bipolar_transistor sameAs m.027h2vc.
- Heterostructure-emitter_bipolar_transistor sameAs Q5747796.
- Heterostructure-emitter_bipolar_transistor wasDerivedFrom Heterostructure-emitter_bipolar_transistor?oldid=551443348.
- Heterostructure-emitter_bipolar_transistor depiction Heterostructure_emitter_bipolar_transistor.jpg.
- Heterostructure-emitter_bipolar_transistor isPrimaryTopicOf Heterostructure-emitter_bipolar_transistor.