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- Floating_body_effect abstract "The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate. The charge accumulates on this capacitor and may cause adverse effects, for example, opening of parasitic transistors in the structure and causing off-state leakages, resulting in higher current consumption and in case of DRAM in loss of information from the memory cells. It also causes the history effect, the dependence of the threshold voltage of the transistor on its previous states. In analog devices, the floating body effect is known as the kink effect.One countermeasure to floating body effect involves use of fully depleted devices. The insulator layer in FD devices is significantly thinner than the channel depletion width. The charge and thus also the body potential of the transistors is therefore fixed. However, the short-channel effect is worsened in the FD devices, the body may still charge up if both source and drain are high, and the architecture is unsuitable for some analog devices that require contact with the body. Hybrid trench isolation is another approach.While floating body effect presents a problem in SOI DRAM chips, it is exploited as the underlying principle for Z-RAM and T-RAM technologies. For this reason, the effect is sometimes called the Cinderella effect in the context of these technologies, because it transforms a disadvantage into an advantage. AMD and Hynix licensed Z-RAM, but as of 2008 had not put it into production.Another similar technology (and Z-RAM competitor) developed at Toshiba and refined at Intel is Floating Body Cell (FBC).".
- Floating_body_effect wikiPageExternalLink zram.pdf.
- Floating_body_effect wikiPageID "3804656".
- Floating_body_effect wikiPageLength "3103".
- Floating_body_effect wikiPageOutDegree "12".
- Floating_body_effect wikiPageRevisionID "621170827".
- Floating_body_effect wikiPageWikiLink Advanced_Micro_Devices.
- Floating_body_effect wikiPageWikiLink Carrier_generation_and_recombination.
- Floating_body_effect wikiPageWikiLink Category:Semiconductors.
- Floating_body_effect wikiPageWikiLink Dynamic_random-access_memory.
- Floating_body_effect wikiPageWikiLink Floating_Body_Cell.
- Floating_body_effect wikiPageWikiLink Microprocessor_Report.
- Floating_body_effect wikiPageWikiLink SK_Hynix.
- Floating_body_effect wikiPageWikiLink Silicon_on_insulator.
- Floating_body_effect wikiPageWikiLink T-RAM.
- Floating_body_effect wikiPageWikiLink Threshold_voltage.
- Floating_body_effect wikiPageWikiLink Transistor.
- Floating_body_effect wikiPageWikiLink Z-RAM.
- Floating_body_effect wikiPageWikiLinkText "Floating body effect".
- Floating_body_effect wikiPageWikiLinkText "floating body effect".
- Floating_body_effect wikiPageUsesTemplate Template:Cite_book.
- Floating_body_effect wikiPageUsesTemplate Template:Electronics-stub.
- Floating_body_effect wikiPageUsesTemplate Template:Reflist.
- Floating_body_effect subject Category:Semiconductors.
- Floating_body_effect hypernym Effect.
- Floating_body_effect type Disease.
- Floating_body_effect type Physic.
- Floating_body_effect type Semiconductor.
- Floating_body_effect comment "The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate.".
- Floating_body_effect label "Floating body effect".
- Floating_body_effect sameAs Q371035.
- Floating_body_effect sameAs Effet_de_corps_flottant.
- Floating_body_effect sameAs m.0b0wg1.
- Floating_body_effect sameAs Q371035.
- Floating_body_effect sameAs 浮体效应.
- Floating_body_effect wasDerivedFrom Floating_body_effect?oldid=621170827.
- Floating_body_effect isPrimaryTopicOf Floating_body_effect.