Matches in DBpedia 2016-04 for { <http://dbpedia.org/resource/Drift-field_transistor> ?p ?o }
Showing triples 1 to 35 of
35
with 100 triples per page.
- Drift-field_transistor abstract "The drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor having a doping-engineered electric field in the base to reduce the charge carrier base transit time.Invented by Herbert Kroemer at the Central Bureau of Telecommunications Technology of the German Postal Service, in 1953, it continues to influence the design of modern high-speed bipolar junction transistors.Early drift transistors were made by diffusing the base dopant in a way that caused a higher doping concentration near the emitter reducing towards the collector.This graded base happens automatically with the double diffused planar transistor (so they aren't usually called drift transistors).".
- Drift-field_transistor wikiPageExternalLink 00960370.pdf.
- Drift-field_transistor wikiPageExternalLink 01474625.pdf?isnumber=&arnumber=1474625.
- Drift-field_transistor wikiPageID "11416513".
- Drift-field_transistor wikiPageLength "2275".
- Drift-field_transistor wikiPageOutDegree "9".
- Drift-field_transistor wikiPageRevisionID "699419452".
- Drift-field_transistor wikiPageWikiLink Bipolar_junction_transistor.
- Drift-field_transistor wikiPageWikiLink Category:1953_introductions.
- Drift-field_transistor wikiPageWikiLink Category:Transistor_types.
- Drift-field_transistor wikiPageWikiLink Charge_carrier.
- Drift-field_transistor wikiPageWikiLink Doping_(semiconductor).
- Drift-field_transistor wikiPageWikiLink Electric_field.
- Drift-field_transistor wikiPageWikiLink Herbert_Kroemer.
- Drift-field_transistor wikiPageWikiLink IBM_1620.
- Drift-field_transistor wikiPageWikiLinkText ""drift" transistor".
- Drift-field_transistor wikiPageWikiLinkText "Drift-field transistor".
- Drift-field_transistor wikiPageWikiLinkText "drift transistor".
- Drift-field_transistor wikiPageWikiLinkText "drift transistors".
- Drift-field_transistor wikiPageWikiLinkText "drift-field transistor".
- Drift-field_transistor wikiPageUsesTemplate Template:Reflist.
- Drift-field_transistor wikiPageUsesTemplate Template:Rp.
- Drift-field_transistor subject Category:1953_introductions.
- Drift-field_transistor subject Category:Transistor_types.
- Drift-field_transistor hypernym Transistor.
- Drift-field_transistor type Type.
- Drift-field_transistor type Transistor.
- Drift-field_transistor type Type.
- Drift-field_transistor comment "The drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor having a doping-engineered electric field in the base to reduce the charge carrier base transit time.Invented by Herbert Kroemer at the Central Bureau of Telecommunications Technology of the German Postal Service, in 1953, it continues to influence the design of modern high-speed bipolar junction transistors.Early drift transistors were made by diffusing the base dopant in a way that caused a higher doping concentration near the emitter reducing towards the collector.This graded base happens automatically with the double diffused planar transistor (so they aren't usually called drift transistors).".
- Drift-field_transistor label "Drift-field transistor".
- Drift-field_transistor sameAs Q16947224.
- Drift-field_transistor sameAs m.02rbr34.
- Drift-field_transistor sameAs Q16947224.
- Drift-field_transistor wasDerivedFrom Drift-field_transistor?oldid=699419452.
- Drift-field_transistor isPrimaryTopicOf Drift-field_transistor.