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- Current_crowding abstract "Current crowding (also current crowding effect, or CCE) is a nonhomogenous distribution of current density through a conductor or semiconductor, especially at the vicinity of the contacts and over the PN junctions.Current crowding is one of the limiting factors of efficiency of light emitting diodes. Materials with low mobility of charge carriers, e.g. AlGaInP, are especially prone to current crowding phenomena. It is a dominant loss mechanism in some LEDs, where the current densities especially around the P-side contacts reach the part of the emission characteristics with lower brightness/current efficiency. [1]Current crowding can lead to localized overheating and formation of thermal hot spots, in catastrophic cases leading to thermal runaway. Nonhomogenous distribution of current also aggravates electromigration effects and formation of voids (see e.g. Kirkendall effect). Formation of voids causes localized nonhomogeneity of current density, and the increased resistance around the void causes further localized temperature rise, which in turn accelerates the formation of the void. Conversely, localized lowering of current density may lead to deposition of the migrated atoms, leading to further lowering of current density and further deposition of material and formation of hillocks, which may cause short circuits. [2]In large bipolar transistors, the resistance of the base layer influences the distribution of current density through the base region, especially at the emitter side. [3]Current crowding occurs especially at the areas of localized lowered resistance, or in areas where the field strength is concentrated (e.g. at the edges of layers).".
- Current_crowding wikiPageExternalLink ch5_4.htm.
- Current_crowding wikiPageExternalLink emig.htm.
- Current_crowding wikiPageExternalLink 142516.html.
- Current_crowding wikiPageID "4981833".
- Current_crowding wikiPageLength "2005".
- Current_crowding wikiPageOutDegree "11".
- Current_crowding wikiPageRevisionID "449307243".
- Current_crowding wikiPageWikiLink Aluminium_gallium_indium_phosphide.
- Current_crowding wikiPageWikiLink Bipolar_junction_transistor.
- Current_crowding wikiPageWikiLink Category:Semiconductor_device_defects.
- Current_crowding wikiPageWikiLink Charge_carrier.
- Current_crowding wikiPageWikiLink Current_density.
- Current_crowding wikiPageWikiLink Electromigration.
- Current_crowding wikiPageWikiLink Kirkendall_effect.
- Current_crowding wikiPageWikiLink Light-emitting_diode.
- Current_crowding wikiPageWikiLink P–n_junction.
- Current_crowding wikiPageWikiLink Thermal_hot_spot.
- Current_crowding wikiPageWikiLink Thermal_runaway.
- Current_crowding wikiPageWikiLinkText "Current crowding effect".
- Current_crowding wikiPageWikiLinkText "Current crowding".
- Current_crowding wikiPageWikiLinkText "current crowding".
- Current_crowding subject Category:Semiconductor_device_defects.
- Current_crowding hypernym Distribution.
- Current_crowding type Software.
- Current_crowding type Defect.
- Current_crowding type Semiconductor.
- Current_crowding comment "Current crowding (also current crowding effect, or CCE) is a nonhomogenous distribution of current density through a conductor or semiconductor, especially at the vicinity of the contacts and over the PN junctions.Current crowding is one of the limiting factors of efficiency of light emitting diodes. Materials with low mobility of charge carriers, e.g. AlGaInP, are especially prone to current crowding phenomena.".
- Current_crowding label "Current crowding".
- Current_crowding sameAs Q5195096.
- Current_crowding sameAs m.0cybjr.
- Current_crowding sameAs Q5195096.
- Current_crowding wasDerivedFrom Current_crowding?oldid=449307243.
- Current_crowding isPrimaryTopicOf Current_crowding.