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- Channel_length_modulation abstract "One of several short-channel effects in MOSFET scaling, channel length modulation (CLM) is a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. Channel length modulation occurs in all field effect transistors, not just MOSFETs.To understand the effect, first the notion of pinch-off of the channel is introduced. The channel is formed by attraction of carriers to the gate, and the current drawn through the channel is nearly a constant independent of drain voltage in saturation mode. However, near the drain, the gate and drain jointly determine the electric field pattern. Instead of flowing in a channel, beyond the pinch-off point the carriers flow in a subsurface pattern made possible because the drain and the gate both control the current. In the figure at the right, the channel is indicated by a dashed line and becomes weaker as the drain is approached, leaving a gap of uninverted silicon between the end of the formed inversion layer and the drain (the pinch-off region).As the drain voltage increases, its control over the current extends further toward the source, so the uninverted region expands toward the source, shortening the length of the channel region, the effect called channel-length modulation. Because resistance is proportional to length, shortening the channel decreases its resistance, causing an increase in current with increase in drain bias for a MOSFET operating in saturation. The effect is more pronounced the shorter the source-to-drain separation, the deeper the drain junction, and the thicker the oxide insulator.In the weak inversion region, the influence of the drain analogous to channel-length modulation leads to poorer device turn off behavior known as drain-induced barrier lowering, a drain induced lowering of threshold voltage.In bipolar devices a similar increase in current is seen with increased collector voltage due to base-narrowing, known as the Early effect. The similarity in effect upon the current has led to use of the term \"Early effect\" for MOSFETs as well, as an alternative name for \"channel-length modulation\".".
- Channel_length_modulation thumbnail Mosfet_saturation.svg?width=300.
- Channel_length_modulation wikiPageID "2828700".
- Channel_length_modulation wikiPageLength "6882".
- Channel_length_modulation wikiPageOutDegree "26".
- Channel_length_modulation wikiPageRevisionID "691410767".
- Channel_length_modulation wikiPageWikiLink 65_nanometer.
- Channel_length_modulation wikiPageWikiLink Amplifier.
- Channel_length_modulation wikiPageWikiLink Ballistic_conduction.
- Channel_length_modulation wikiPageWikiLink Category:Electronic_design.
- Channel_length_modulation wikiPageWikiLink Current_mirror.
- Channel_length_modulation wikiPageWikiLink Drain-induced_barrier_lowering.
- Channel_length_modulation wikiPageWikiLink Early_effect.
- Channel_length_modulation wikiPageWikiLink Field-effect_transistor.
- Channel_length_modulation wikiPageWikiLink Hybrid-pi_model.
- Channel_length_modulation wikiPageWikiLink MOSFET.
- Channel_length_modulation wikiPageWikiLink Output_impedance.
- Channel_length_modulation wikiPageWikiLink SPICE.
- Channel_length_modulation wikiPageWikiLink Short-channel_effect.
- Channel_length_modulation wikiPageWikiLink Threshold_voltage.
- Channel_length_modulation wikiPageWikiLink Transistor_model.
- Channel_length_modulation wikiPageWikiLink Velocity_saturation.
- Channel_length_modulation wikiPageWikiLink File:Mosfet_saturation.svg.
- Channel_length_modulation wikiPageWikiLinkText "Channel length modulation".
- Channel_length_modulation wikiPageWikiLinkText "Shichman–Hodges model".
- Channel_length_modulation wikiPageWikiLinkText "channel length modulation".
- Channel_length_modulation wikiPageWikiLinkText "channel pinching".
- Channel_length_modulation wikiPageWikiLinkText "channel-length modulation".
- Channel_length_modulation wikiPageWikiLinkText "pinch-off".
- Channel_length_modulation wikiPageUsesTemplate Template:Anchor.
- Channel_length_modulation wikiPageUsesTemplate Template:Use_dmy_dates.
- Channel_length_modulation subject Category:Electronic_design.
- Channel_length_modulation hypernym Shortening.
- Channel_length_modulation comment "One of several short-channel effects in MOSFET scaling, channel length modulation (CLM) is a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. Channel length modulation occurs in all field effect transistors, not just MOSFETs.To understand the effect, first the notion of pinch-off of the channel is introduced.".
- Channel_length_modulation label "Channel length modulation".
- Channel_length_modulation sameAs Q5072499.
- Channel_length_modulation sameAs m.0859xz.
- Channel_length_modulation sameAs Q5072499.
- Channel_length_modulation wasDerivedFrom Channel_length_modulation?oldid=691410767.
- Channel_length_modulation depiction Mosfet_saturation.svg.
- Channel_length_modulation isPrimaryTopicOf Channel_length_modulation.