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- Atomic_layer_epitaxy abstract "Atomic layer epitaxy (ALE) or Atomic Layer Chemical Vapor Deposition (ALCVD), now more generally called Atomic Layer Deposition (ALD), is a specialized form of epitaxy that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate. The reactants are brought to the substrate as alternating pulses with \"dead\" times in between. ALE makes use of the fact that the incoming material is bound strongly until all sites available for chemisorption are occupied. The dead times are used to flush the excess material.It is mostly used in semiconductor fabrication to grow thin films of thickness of the atomic order.".
- Atomic_layer_epitaxy wikiPageExternalLink 005.
- Atomic_layer_epitaxy wikiPageExternalLink Smoothing.pdf.
- Atomic_layer_epitaxy wikiPageExternalLink plasma_assisted_atomic_layer_deposition.
- Atomic_layer_epitaxy wikiPageExternalLink Te-Cu-Pb%20on%20Au.htm.
- Atomic_layer_epitaxy wikiPageExternalLink pub.
- Atomic_layer_epitaxy wikiPageID "3593667".
- Atomic_layer_epitaxy wikiPageLength "3520".
- Atomic_layer_epitaxy wikiPageOutDegree "13".
- Atomic_layer_epitaxy wikiPageRevisionID "701771720".
- Atomic_layer_epitaxy wikiPageWikiLink Adsorption.
- Atomic_layer_epitaxy wikiPageWikiLink Atomic_layer_deposition.
- Atomic_layer_epitaxy wikiPageWikiLink Category:Thin_film_deposition.
- Atomic_layer_epitaxy wikiPageWikiLink Electroluminescent_display.
- Atomic_layer_epitaxy wikiPageWikiLink Epitaxy.
- Atomic_layer_epitaxy wikiPageWikiLink Flat_panel_display.
- Atomic_layer_epitaxy wikiPageWikiLink Monolayer.
- Atomic_layer_epitaxy wikiPageWikiLink Semiconductor_device_fabrication.
- Atomic_layer_epitaxy wikiPageWikiLink Trimethylaluminium.
- Atomic_layer_epitaxy wikiPageWikiLink Tuomo_Suntola.
- Atomic_layer_epitaxy wikiPageWikiLink Zinc_sulfide.
- Atomic_layer_epitaxy wikiPageWikiLinkText "ALE".
- Atomic_layer_epitaxy wikiPageWikiLinkText "Atomic layer epitaxy".
- Atomic_layer_epitaxy wikiPageWikiLinkText "atomic layer epitaxy".
- Atomic_layer_epitaxy wikiPageUsesTemplate Template:Refimprove.
- Atomic_layer_epitaxy wikiPageUsesTemplate Template:Reflist.
- Atomic_layer_epitaxy subject Category:Thin_film_deposition.
- Atomic_layer_epitaxy hypernym Form.
- Atomic_layer_epitaxy type Film.
- Atomic_layer_epitaxy type Coating.
- Atomic_layer_epitaxy type Film.
- Atomic_layer_epitaxy type Process.
- Atomic_layer_epitaxy comment "Atomic layer epitaxy (ALE) or Atomic Layer Chemical Vapor Deposition (ALCVD), now more generally called Atomic Layer Deposition (ALD), is a specialized form of epitaxy that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate. The reactants are brought to the substrate as alternating pulses with \"dead\" times in between.".
- Atomic_layer_epitaxy label "Atomic layer epitaxy".
- Atomic_layer_epitaxy sameAs Q4817336.
- Atomic_layer_epitaxy sameAs m.09nmx1.
- Atomic_layer_epitaxy sameAs Q4817336.
- Atomic_layer_epitaxy wasDerivedFrom Atomic_layer_epitaxy?oldid=701771720.
- Atomic_layer_epitaxy isPrimaryTopicOf Atomic_layer_epitaxy.