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- 90b3c7f6333810471c890d6e493535b2bd599c697110c42c4505c38e184614b7 countryCode "US".
- 90b3c7f6333810471c890d6e493535b2bd599c697110c42c4505c38e184614b7 inventorFirst "James R.".
- 90b3c7f6333810471c890d6e493535b2bd599c697110c42c4505c38e184614b7 inventorLast "Biard".
- 90b3c7f6333810471c890d6e493535b2bd599c697110c42c4505c38e184614b7 isCitedBy Schottky_transistor.
- 90b3c7f6333810471c890d6e493535b2bd599c697110c42c4505c38e184614b7 issueDate "1969-08-26".
- 90b3c7f6333810471c890d6e493535b2bd599c697110c42c4505c38e184614b7 patentNumber "3463975".
- 90b3c7f6333810471c890d6e493535b2bd599c697110c42c4505c38e184614b7 publicationDate "1964-12-31".
- 90b3c7f6333810471c890d6e493535b2bd599c697110c42c4505c38e184614b7 title "Unitary Semiconductor High Speed Switching Device Utilizing a Barrier Diode".