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- Q6783445 subject Q6348244.
- Q6783445 abstract "In maskless lithography, the radiation that is used to expose a photosensitive emulsion (or photoresist) is not projected from, or transmitted through, a photomask. Instead, most commonly, the radiation is focused to a narrow beam. The beam is then used to directly write the image into the photoresist, one or more pixels at a time. An alternative method, developed by Micronic Laser Systems or Heidelberg Instruments, is to scan a programmable reflective photomask, which is then imaged onto the photoresist. This has the advantage of higher throughput and flexibility. Both methods are used to define patterns on photomasks.A key advantage of maskless lithography is the ability to change lithography patterns from one run to the next, without incurring the cost of generating a new photomask. This may prove useful for double patterning.".
- Q6783445 wikiPageExternalLink www.mla.himt.de.
- Q6783445 wikiPageExternalLink news65800078.html.
- Q6783445 wikiPageWikiLink Q11391.
- Q6783445 wikiPageWikiLink Q1152323.
- Q6783445 wikiPageWikiLink Q1319657.
- Q6783445 wikiPageWikiLink Q1439684.
- Q6783445 wikiPageWikiLink Q176691.
- Q6783445 wikiPageWikiLink Q18335.
- Q6783445 wikiPageWikiLink Q1917460.
- Q6783445 wikiPageWikiLink Q207361.
- Q6783445 wikiPageWikiLink Q256845.
- Q6783445 wikiPageWikiLink Q258563.
- Q6783445 wikiPageWikiLink Q2722179.
- Q6783445 wikiPageWikiLink Q355198.
- Q6783445 wikiPageWikiLink Q5279666.
- Q6783445 wikiPageWikiLink Q5322525.
- Q6783445 wikiPageWikiLink Q6046394.
- Q6783445 wikiPageWikiLink Q62621.
- Q6783445 wikiPageWikiLink Q6348244.
- Q6783445 wikiPageWikiLink Q6934849.
- Q6783445 wikiPageWikiLink Q83152.
- Q6783445 wikiPageWikiLink Q83341.
- Q6783445 comment "In maskless lithography, the radiation that is used to expose a photosensitive emulsion (or photoresist) is not projected from, or transmitted through, a photomask. Instead, most commonly, the radiation is focused to a narrow beam. The beam is then used to directly write the image into the photoresist, one or more pixels at a time.".
- Q6783445 label "Maskless lithography".