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- Q486936 subject Q8424990.
- Q486936 subject Q8728768.
- Q486936 subject Q9805826.
- Q486936 abstract "Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios . It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through silicon via's (TSV)'s in advanced 3D wafer level packaging technology .There are two main technologies for high-rate DRIE: cryogenic and Bosch, although the Bosch process is the only recognised production technique. Both Bosch and cryo processes can fabricate 90° (truly vertical) walls, but often the walls are slightly tapered, e.g. 88° ("reentrant") or 92° ("retrograde").Another mechanism is sidewall passivation: SiOxFy functional groups (which originate from sulphur hexafluoride and oxygen etch gases) condense on the sidewalls, and protect them from lateral etching. As a combination of these processes deep vertical structures can be made.".
- Q486936 thumbnail Bosch_process_PILLAR.jpg?width=300.
- Q486936 wikiPageWikiLink Q11579.
- Q486936 wikiPageWikiLink Q143252.
- Q486936 wikiPageWikiLink Q1441762.
- Q486936 wikiPageWikiLink Q1578120.
- Q486936 wikiPageWikiLink Q1640159.
- Q486936 wikiPageWikiLink Q170409.
- Q486936 wikiPageWikiLink Q175561.
- Q486936 wikiPageWikiLink Q178674.
- Q486936 wikiPageWikiLink Q189396.
- Q486936 wikiPageWikiLink Q234021.
- Q486936 wikiPageWikiLink Q2368605.
- Q486936 wikiPageWikiLink Q2392011.
- Q486936 wikiPageWikiLink Q267131.
- Q486936 wikiPageWikiLink Q273163.
- Q486936 wikiPageWikiLink Q279055.
- Q486936 wikiPageWikiLink Q3107982.
- Q486936 wikiPageWikiLink Q3420076.
- Q486936 wikiPageWikiLink Q36496.
- Q486936 wikiPageWikiLink Q36534.
- Q486936 wikiPageWikiLink Q466686.
- Q486936 wikiPageWikiLink Q5322.
- Q486936 wikiPageWikiLink Q538587.
- Q486936 wikiPageWikiLink Q670.
- Q486936 wikiPageWikiLink Q80831.
- Q486936 wikiPageWikiLink Q8424990.
- Q486936 wikiPageWikiLink Q8728768.
- Q486936 wikiPageWikiLink Q898444.
- Q486936 wikiPageWikiLink Q917260.
- Q486936 wikiPageWikiLink Q9805826.
- Q486936 comment "Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios .".
- Q486936 label "Deep reactive-ion etching".
- Q486936 depiction Bosch_process_PILLAR.jpg.