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- Q2098457 subject Q6543780.
- Q2098457 subject Q6831855.
- Q2098457 subject Q8728768.
- Q2098457 abstract "Plasma-immersion ion implantation (PIII) or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. The electrode is a cathode for an electropositive plasma, while it is an anode for an electronegative plasma. Plasma can be generated in a suitably designed vacuum chamber with the help of various plasma sources such as Electron Cyclotron Resonance plasma source which yields plasma with the highest ion density and lowest contamination level, helicon plasma source, capacitively coupled plasma source, inductively coupled plasma source, DC glow discharge and metal vapor arc(for metallic species). The vacuum chamber can be of two types - diode and triode type depending upon whether the power supply is applied to the substrate as in the former case or to the perforated grid as in the latter.".
- Q2098457 thumbnail PiiiD_Knee_AgTarget_IOT.jpg?width=300.
- Q2098457 wikiPageWikiLink Q1111.
- Q2098457 wikiPageWikiLink Q1139740.
- Q2098457 wikiPageWikiLink Q1141780.
- Q2098457 wikiPageWikiLink Q11426.
- Q2098457 wikiPageWikiLink Q11432.
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- Q2098457 wikiPageWikiLink Q503327.
- Q2098457 wikiPageWikiLink Q5034482.
- Q2098457 wikiPageWikiLink Q5463959.
- Q2098457 wikiPageWikiLink Q6543780.
- Q2098457 wikiPageWikiLink Q6634041.
- Q2098457 wikiPageWikiLink Q6831855.
- Q2098457 wikiPageWikiLink Q7259687.
- Q2098457 wikiPageWikiLink Q78974.
- Q2098457 wikiPageWikiLink Q8728768.
- Q2098457 comment "Plasma-immersion ion implantation (PIII) or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. The electrode is a cathode for an electropositive plasma, while it is an anode for an electronegative plasma.".
- Q2098457 label "Plasma-immersion ion implantation".
- Q2098457 depiction PiiiD_Knee_AgTarget_IOT.jpg.