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- Q1640159 subject Q8424990.
- Q1640159 subject Q8728768.
- Q1640159 subject Q8765640.
- Q1640159 abstract "Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.".
- Q1640159 thumbnail Reactive_Ion_Etcher.JPG?width=300.
- Q1640159 wikiPageExternalLink rie.html.
- Q1640159 wikiPageExternalLink plasmaetchfundam.html.
- Q1640159 wikiPageExternalLink rie_etching.phtml.
- Q1640159 wikiPageExternalLink sibo_1.htm.
- Q1640159 wikiPageExternalLink reactive-ion-etching-systems-rie.php.
- Q1640159 wikiPageWikiLink Q10251.
- Q1640159 wikiPageWikiLink Q11475.
- Q1640159 wikiPageWikiLink Q1191918.
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- Q1640159 wikiPageWikiLink Q273163.
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- Q1640159 wikiPageWikiLink Q304545.
- Q1640159 wikiPageWikiLink Q3396184.
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- Q1640159 wikiPageWikiLink Q39552.
- Q1640159 wikiPageWikiLink Q46276.
- Q1640159 wikiPageWikiLink Q466686.
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- Q1640159 wikiPageWikiLink Q670.
- Q1640159 wikiPageWikiLink Q7201781.
- Q1640159 wikiPageWikiLink Q745837.
- Q1640159 wikiPageWikiLink Q8424990.
- Q1640159 wikiPageWikiLink Q8728768.
- Q1640159 wikiPageWikiLink Q8765640.
- Q1640159 wikiPageWikiLink Q898444.
- Q1640159 comment "Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.".
- Q1640159 label "Reactive-ion etching".
- Q1640159 depiction Reactive_Ion_Etcher.JPG.