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- Q1386690 subject Q6435072.
- Q1386690 subject Q7157166.
- Q1386690 subject Q8773175.
- Q1386690 abstract "A thin-film bulk acoustic resonator (FBAR or TFBAR) is a device consisting of a piezoelectric material sandwiched between two electrodes and acoustically isolated from the surrounding medium. FBAR devices using piezoelectric films with thicknesses ranging from several micrometres down to tenth of micrometres resonate in the frequency range of roughly 100 MHz to 10 GHz. Aluminium nitride and zinc oxide are two common piezoelectric materials used in FBARs.".
- Q1386690 wikiPageExternalLink fbar.htm.
- Q1386690 wikiPageExternalLink fbar_filters.
- Q1386690 wikiPageWikiLink Q1266530.
- Q1386690 wikiPageWikiLink Q172858.
- Q1386690 wikiPageWikiLink Q17517.
- Q1386690 wikiPageWikiLink Q176140.
- Q1386690 wikiPageWikiLink Q183759.
- Q1386690 wikiPageWikiLink Q190077.
- Q1386690 wikiPageWikiLink Q2558427.
- Q1386690 wikiPageWikiLink Q414445.
- Q1386690 wikiPageWikiLink Q424074.
- Q1386690 wikiPageWikiLink Q6435072.
- Q1386690 wikiPageWikiLink Q7157166.
- Q1386690 wikiPageWikiLink Q8773175.
- Q1386690 comment "A thin-film bulk acoustic resonator (FBAR or TFBAR) is a device consisting of a piezoelectric material sandwiched between two electrodes and acoustically isolated from the surrounding medium. FBAR devices using piezoelectric films with thicknesses ranging from several micrometres down to tenth of micrometres resonate in the frequency range of roughly 100 MHz to 10 GHz. Aluminium nitride and zinc oxide are two common piezoelectric materials used in FBARs.".
- Q1386690 label "Thin-film bulk acoustic resonator".