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- Shallow_trench_isolation abstract "Shallow trench isolation (STI), also known as Box Isolation Technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller. Older CMOS technologies and non-MOS technologies commonly use isolation based on LOCOS.STI is created early during the semiconductor device fabrication process, before transistors are formed. The key steps of the STI process involve etching a pattern of trenches in the silicon, depositing one or more dielectric materials (such as silicon dioxide) to fill the trenches, and removing the excess dielectric using a technique such as chemical-mechanical planarization.[1]Certain semiconductor fabrication technologies also include deep trench isolation, a related feature often found in analog integrated circuits.The effect of the trench edge has given rise to what has recently been termed the \"reverse narrow channel effect\" or \"inverse narrow width effect\". Basically, due to the electric field enhancement at the edge, it is easier to form a conducting channel (by inversion) at a lower voltage. The threshold voltage is effectively reduced for a narrower transistor width. The main concern for electronic devices is the resulting subthreshold leakage current, which is substantially larger after the threshold voltage reduction.".
- Shallow_trench_isolation thumbnail Isolation_pitch_vs_design_rule.PNG?width=300.
- Shallow_trench_isolation wikiPageExternalLink features.htm.
- Shallow_trench_isolation wikiPageExternalLink Using-broadband-reflectometry-for-fast-trench-depth-measurement.
- Shallow_trench_isolation wikiPageExternalLink shallowtrenchisa.html.
- Shallow_trench_isolation wikiPageExternalLink etronics_spin_stiov.asp.
- Shallow_trench_isolation wikiPageID "6648797".
- Shallow_trench_isolation wikiPageLength "4124".
- Shallow_trench_isolation wikiPageOutDegree "22".
- Shallow_trench_isolation wikiPageRevisionID "670891491".
- Shallow_trench_isolation wikiPageWikiLink 250_nanometer.
- Shallow_trench_isolation wikiPageWikiLink CMOS.
- Shallow_trench_isolation wikiPageWikiLink Category:Semiconductor_device_fabrication.
- Shallow_trench_isolation wikiPageWikiLink Category:Semiconductor_structures.
- Shallow_trench_isolation wikiPageWikiLink Chemical-mechanical_planarization.
- Shallow_trench_isolation wikiPageWikiLink Deep_trench_isolation.
- Shallow_trench_isolation wikiPageWikiLink Dielectric.
- Shallow_trench_isolation wikiPageWikiLink Electric_current.
- Shallow_trench_isolation wikiPageWikiLink Electric_field.
- Shallow_trench_isolation wikiPageWikiLink Etching_(microfabrication).
- Shallow_trench_isolation wikiPageWikiLink File:Isolation_pitch_vs_design_rule.PNG.
- Shallow_trench_isolation wikiPageWikiLink Front_end_of_line.
- Shallow_trench_isolation wikiPageWikiLink Integrated_circuit.
- Shallow_trench_isolation wikiPageWikiLink LOCOS.
- Shallow_trench_isolation wikiPageWikiLink Leakage_(electronics).
- Shallow_trench_isolation wikiPageWikiLink Linear_integrated_circuit.
- Shallow_trench_isolation wikiPageWikiLink Semiconductor_device.
- Shallow_trench_isolation wikiPageWikiLink Semiconductor_device_fabrication.
- Shallow_trench_isolation wikiPageWikiLink Silicon_dioxide.
- Shallow_trench_isolation wikiPageWikiLink Subthreshold_conduction.
- Shallow_trench_isolation wikiPageWikiLink Threshold_voltage.
- Shallow_trench_isolation wikiPageWikiLinkText "STI".
- Shallow_trench_isolation wikiPageWikiLinkText "Shallow trench isolation".
- Shallow_trench_isolation wikiPageWikiLinkText "isolation".
- Shallow_trench_isolation wikiPageWikiLinkText "shallow trench isolation".
- Shallow_trench_isolation wikiPageUsesTemplate Template:Electronics-stub.
- Shallow_trench_isolation wikiPageUsesTemplate Template:Reflist.
- Shallow_trench_isolation subject Category:Semiconductor_device_fabrication.
- Shallow_trench_isolation subject Category:Semiconductor_structures.
- Shallow_trench_isolation hypernym Feature.
- Shallow_trench_isolation type Work.
- Shallow_trench_isolation type Process.
- Shallow_trench_isolation type Redirect.
- Shallow_trench_isolation type Semiconductor.
- Shallow_trench_isolation type Structure.
- Shallow_trench_isolation comment "Shallow trench isolation (STI), also known as Box Isolation Technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller. Older CMOS technologies and non-MOS technologies commonly use isolation based on LOCOS.STI is created early during the semiconductor device fabrication process, before transistors are formed.".
- Shallow_trench_isolation label "Shallow trench isolation".
- Shallow_trench_isolation sameAs Q1424524.
- Shallow_trench_isolation sameAs Grabenisolation.
- Shallow_trench_isolation sameAs m.0gg3pw.
- Shallow_trench_isolation sameAs Q1424524.
- Shallow_trench_isolation wasDerivedFrom Shallow_trench_isolation?oldid=670891491.
- Shallow_trench_isolation depiction Isolation_pitch_vs_design_rule.PNG.
- Shallow_trench_isolation isPrimaryTopicOf Shallow_trench_isolation.