Matches in DBpedia 2016-04 for { <http://dbpedia.org/resource/LDMOS> ?p ?o }
Showing triples 1 to 50 of
50
with 100 triples per page.
- LDMOS abstract "LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles. As an example, The drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.Silicon-based LDMOS FETs are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source breakdown voltage usually above 60 volts. Compared to other devices such as GaAs FETs they show a lower maximum power gain frequency.Manufacturers of LDMOS devices and foundries offering LDMOS technologies include TSMC, GLOBALFOUNDRIES, Vanguard International Semiconductor Corporation, STMicroelectronics, Infineon Technologies, RFMD, Freescale Semiconductor, NXP Semiconductors, SMIC, MK Semiconductors and Polyfet.RF power amplifiers based on single LDMOS devices suffer from relatively poor efficiency when used in 3G and 4G (LTE) networks, due to the higher peak-to-average power of the modulation schemes and CDMA and OFDMA access techniques used in these communication systems. The efficiency of LDMOS power amplifiers can be boosted using typical efficiency enhancement techniques, for example Doherty topologies or envelope tracking.".
- LDMOS wikiPageExternalLink LDMOS.cfm.
- LDMOS wikiPageExternalLink Power-Management-Overview-FINAL.pdf.
- LDMOS wikiPageID "16211452".
- LDMOS wikiPageLength "2901".
- LDMOS wikiPageOutDegree "26".
- LDMOS wikiPageRevisionID "697348466".
- LDMOS wikiPageWikiLink Breakdown_voltage.
- LDMOS wikiPageWikiLink Category:Electronic_design.
- LDMOS wikiPageWikiLink Category:MOSFETs.
- LDMOS wikiPageWikiLink Category:Transistor_types.
- LDMOS wikiPageWikiLink Code_division_multiple_access.
- LDMOS wikiPageWikiLink Crest_factor.
- LDMOS wikiPageWikiLink Doherty_amplifier.
- LDMOS wikiPageWikiLink Envelope_tracking.
- LDMOS wikiPageWikiLink Field-effect_transistor.
- LDMOS wikiPageWikiLink Freescale_Semiconductor.
- LDMOS wikiPageWikiLink Gallium_arsenide.
- LDMOS wikiPageWikiLink GlobalFoundries.
- LDMOS wikiPageWikiLink Infineon_Technologies.
- LDMOS wikiPageWikiLink MK_Semiconductors.
- LDMOS wikiPageWikiLink Modulation.
- LDMOS wikiPageWikiLink NXP_Semiconductors.
- LDMOS wikiPageWikiLink Orthogonal_frequency-division_multiplexing.
- LDMOS wikiPageWikiLink Polyfet.
- LDMOS wikiPageWikiLink Power_MOSFET.
- LDMOS wikiPageWikiLink RF_Micro_Devices.
- LDMOS wikiPageWikiLink RF_power_amplifier.
- LDMOS wikiPageWikiLink STMicroelectronics.
- LDMOS wikiPageWikiLink Semiconductor_Manufacturing_International_Corporation.
- LDMOS wikiPageWikiLink TSMC.
- LDMOS wikiPageWikiLink Vanguard_International_Semiconductor_Corporation.
- LDMOS wikiPageWikiLink Volt.
- LDMOS wikiPageWikiLinkText "LDMOS".
- LDMOS wikiPageUsesTemplate Template:Reflist.
- LDMOS subject Category:Electronic_design.
- LDMOS subject Category:MOSFETs.
- LDMOS subject Category:Transistor_types.
- LDMOS type Type.
- LDMOS type Transistor.
- LDMOS type Type.
- LDMOS comment "LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles.".
- LDMOS label "LDMOS".
- LDMOS sameAs Q4042432.
- LDMOS sameAs m.03wd164.
- LDMOS sameAs LDMOS.
- LDMOS sameAs Q4042432.
- LDMOS sameAs 横向扩散金属氧化物半导体.
- LDMOS wasDerivedFrom LDMOS?oldid=697348466.
- LDMOS isPrimaryTopicOf LDMOS.