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- Gate_oxide abstract "The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by oxidizing the silicon of the channel to form a thin (5 - 200 nm) insulating layer of silicon dioxide. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel.Above the gate oxide is a thin electrode layer made of a conductor which can be aluminium, a highly doped silicon, a refractory metal such as tungsten, a silicide (TiSi, MoSi, TaSi or WSi) or a sandwich of these layers. This gate electrode is often called \"gate metal\" or \"gate conductor\". The geometrical width of the gate conductor electrode (the direction transverse to current flow) is called the physical gate width. The physical gate width may be slightly different from the electrical channel width used to model the transistor as fringing electric fields can exert an influence on conductors that are not immediately below the gate.The electrical properties of the gate oxide are critical to the formation of the conductive channel region below the gate. In NMOS-type devices, the zone beneath the gate oxide is a thin n-type inversion layer on the surface of the p-type semiconductor substrate. It is induced by the oxide electric field from the applied gate voltage VG. This is known as the inversion channel. It is the conduction channel that allows the electrons to flow from the source to the drain.Overstressing the gate oxide layer, a common failure mode of MOS devices, may lead to gate rupture or to stress induced leakage current.".
- Gate_oxide wikiPageID "14373611".
- Gate_oxide wikiPageLength "2550".
- Gate_oxide wikiPageOutDegree "25".
- Gate_oxide wikiPageRevisionID "702996263".
- Gate_oxide wikiPageWikiLink Aluminium.
- Gate_oxide wikiPageWikiLink Category:Semiconductor_devices.
- Gate_oxide wikiPageWikiLink Category:Semiconductor_fabrication_materials.
- Gate_oxide wikiPageWikiLink Category:Semiconductor_structures.
- Gate_oxide wikiPageWikiLink Dielectric.
- Gate_oxide wikiPageWikiLink Electric_field.
- Gate_oxide wikiPageWikiLink Electrical_conductor.
- Gate_oxide wikiPageWikiLink Electrical_resistance_and_conductance.
- Gate_oxide wikiPageWikiLink Electron.
- Gate_oxide wikiPageWikiLink Extrinsic_semiconductor.
- Gate_oxide wikiPageWikiLink Failure_of_electronic_components.
- Gate_oxide wikiPageWikiLink MOSFET.
- Gate_oxide wikiPageWikiLink Molybdenum_disilicide.
- Gate_oxide wikiPageWikiLink Redox.
- Gate_oxide wikiPageWikiLink Refractory_metals.
- Gate_oxide wikiPageWikiLink SILC_(semiconductors).
- Gate_oxide wikiPageWikiLink Silicide.
- Gate_oxide wikiPageWikiLink Silicon.
- Gate_oxide wikiPageWikiLink Silicon_dioxide.
- Gate_oxide wikiPageWikiLink Tantalum_silicide.
- Gate_oxide wikiPageWikiLink Titanium_silicide.
- Gate_oxide wikiPageWikiLink Tungsten.
- Gate_oxide wikiPageWikiLink Tungsten_disilicide.
- Gate_oxide wikiPageWikiLink Voltage.
- Gate_oxide wikiPageWikiLinkText "Gate oxide".
- Gate_oxide wikiPageWikiLinkText "gate dielectric".
- Gate_oxide wikiPageWikiLinkText "gate insulator".
- Gate_oxide wikiPageWikiLinkText "gate oxide".
- Gate_oxide wikiPageWikiLinkText "gate".
- Gate_oxide wikiPageWikiLinkText "oxide".
- Gate_oxide subject Category:Semiconductor_devices.
- Gate_oxide subject Category:Semiconductor_fabrication_materials.
- Gate_oxide subject Category:Semiconductor_structures.
- Gate_oxide hypernym Layer.
- Gate_oxide type AnatomicalStructure.
- Gate_oxide type Component.
- Gate_oxide type Redirect.
- Gate_oxide type Semiconductor.
- Gate_oxide type Structure.
- Gate_oxide comment "The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by oxidizing the silicon of the channel to form a thin (5 - 200 nm) insulating layer of silicon dioxide. A conductive gate material is subsequently deposited over the gate oxide to form the transistor.".
- Gate_oxide label "Gate oxide".
- Gate_oxide sameAs Q5527031.
- Gate_oxide sameAs m.03d1zg5.
- Gate_oxide sameAs Q5527031.
- Gate_oxide sameAs 栅氧化层.
- Gate_oxide wasDerivedFrom Gate_oxide?oldid=702996263.
- Gate_oxide isPrimaryTopicOf Gate_oxide.