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- Dopant_Activation abstract "Dopant Activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. The term is often restricted to the application of thermal energy following the ion implantation of dopants. In the most common industrial example, rapid thermal processing is applied to silicon following the ion implantation of dopants such as phosphorus, arsenic and boron. Vacancies generated at elevated temperature (1200 °C) facilitate the movement of these species from interstitial to substitutional lattice sites while amorphization damage from the implantation process recrystallizes. A relatively rapid process, peak temperature is often maintained for less than one second to minimize unwanted chemical diffusion.".
- Dopant_Activation wikiPageID "30631605".
- Dopant_Activation wikiPageLength "1851".
- Dopant_Activation wikiPageOutDegree "9".
- Dopant_Activation wikiPageRevisionID "702998221".
- Dopant_Activation wikiPageWikiLink Amorphous_solid.
- Dopant_Activation wikiPageWikiLink Category:Semiconductor_properties.
- Dopant_Activation wikiPageWikiLink Crystallographic_defect.
- Dopant_Activation wikiPageWikiLink Diffusion.
- Dopant_Activation wikiPageWikiLink Dopant.
- Dopant_Activation wikiPageWikiLink Rapid_thermal_processing.
- Dopant_Activation wikiPageWikiLink Recrystallization_(chemistry).
- Dopant_Activation wikiPageWikiLink Semiconductor.
- Dopant_Activation wikiPageWikiLinkText "Dopant Activation".
- Dopant_Activation wikiPageUsesTemplate Template:Electronics-stub.
- Dopant_Activation subject Category:Semiconductor_properties.
- Dopant_Activation hypernym Process.
- Dopant_Activation type Election.
- Dopant_Activation type Physic.
- Dopant_Activation type Redirect.
- Dopant_Activation type Semiconductor.
- Dopant_Activation comment "Dopant Activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. The term is often restricted to the application of thermal energy following the ion implantation of dopants. In the most common industrial example, rapid thermal processing is applied to silicon following the ion implantation of dopants such as phosphorus, arsenic and boron.".
- Dopant_Activation label "Dopant Activation".
- Dopant_Activation sameAs Q5297293.
- Dopant_Activation sameAs m.0g9z3w7.
- Dopant_Activation sameAs Q5297293.
- Dopant_Activation wasDerivedFrom Dopant_Activation?oldid=702998221.
- Dopant_Activation isPrimaryTopicOf Dopant_Activation.