Matches in DBpedia 2016-04 for { <http://dbpedia.org/resource/Deal–Grove_model> ?p ?o }
Showing triples 1 to 54 of
54
with 100 triples per page.
- Deal–Grove_model abstract "The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965 by Bruce Deal and Andrew Grove, of Fairchild Semiconductor.".
- Deal–Grove_model thumbnail Deal-Grove.png?width=300.
- Deal–Grove_model wikiPageExternalLink thermaloxide.html.
- Deal–Grove_model wikiPageID "8559342".
- Deal–Grove_model wikiPageLength "7081".
- Deal–Grove_model wikiPageOutDegree "29".
- Deal–Grove_model wikiPageRevisionID "688520555".
- Deal–Grove_model wikiPageWikiLink Activation_energy.
- Deal–Grove_model wikiPageWikiLink Andrew_Grove.
- Deal–Grove_model wikiPageWikiLink Atmosphere_(unit).
- Deal–Grove_model wikiPageWikiLink Boltzmann_constant.
- Deal–Grove_model wikiPageWikiLink Category:Chemical_engineering.
- Deal–Grove_model wikiPageWikiLink Category:Semiconductor_device_fabrication.
- Deal–Grove_model wikiPageWikiLink Chemical_reaction.
- Deal–Grove_model wikiPageWikiLink Crystal.
- Deal–Grove_model wikiPageWikiLink Diffusion.
- Deal–Grove_model wikiPageWikiLink Dopant.
- Deal–Grove_model wikiPageWikiLink Doping_(semiconductor).
- Deal–Grove_model wikiPageWikiLink Electronvolt.
- Deal–Grove_model wikiPageWikiLink Fairchild_Semiconductor.
- Deal–Grove_model wikiPageWikiLink Ficks_laws_of_diffusion.
- Deal–Grove_model wikiPageWikiLink Flux.
- Deal–Grove_model wikiPageWikiLink Gas.
- Deal–Grove_model wikiPageWikiLink Henrys_law.
- Deal–Grove_model wikiPageWikiLink Miller_index.
- Deal–Grove_model wikiPageWikiLink Oxide.
- Deal–Grove_model wikiPageWikiLink Pressure.
- Deal–Grove_model wikiPageWikiLink Rate_equation.
- Deal–Grove_model wikiPageWikiLink Redox.
- Deal–Grove_model wikiPageWikiLink Semiconductor_device_fabrication.
- Deal–Grove_model wikiPageWikiLink Silicon.
- Deal–Grove_model wikiPageWikiLink Steady_state.
- Deal–Grove_model wikiPageWikiLink Thermal_oxidation.
- Deal–Grove_model wikiPageWikiLink Wafer_(electronics).
- Deal–Grove_model wikiPageWikiLink File:Deal-Grove.png.
- Deal–Grove_model wikiPageWikiLinkText "Deal–Grove model".
- Deal–Grove_model wikiPageUsesTemplate Template:Cite_book.
- Deal–Grove_model wikiPageUsesTemplate Template:Cite_journal.
- Deal–Grove_model wikiPageUsesTemplate Template:E.
- Deal–Grove_model subject Category:Chemical_engineering.
- Deal–Grove_model subject Category:Semiconductor_device_fabrication.
- Deal–Grove_model type Discipline.
- Deal–Grove_model type Process.
- Deal–Grove_model type Redirect.
- Deal–Grove_model type Semiconductor.
- Deal–Grove_model comment "The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965 by Bruce Deal and Andrew Grove, of Fairchild Semiconductor.".
- Deal–Grove_model label "Deal–Grove model".
- Deal–Grove_model sameAs Q4299328.
- Deal–Grove_model sameAs m.0277w7j.
- Deal–Grove_model sameAs Модель_Дила_—_Гроува.
- Deal–Grove_model sameAs Q4299328.
- Deal–Grove_model wasDerivedFrom Deal–Grove_model?oldid=688520555.
- Deal–Grove_model depiction Deal-Grove.png.
- Deal–Grove_model isPrimaryTopicOf Deal–Grove_model.