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- Saturation_velocity abstract "Saturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a charge carrier can not move any faster, having reached its saturation velocity, due to mechanisms that eventually limit the movement of the carriers in the material.Saturation velocity is a very important parameter in the design of semiconductor devices, especially field effect transistors, which are basic building blocks of almost all modern integrated circuits. Typical values of saturation velocity may vary greatly for different materials, for example for Si it is in the order of 1×107 cm/s, for GaAs 1.2×107 cm/s, while for 6H-SiC, it is near 2×107 cm/s. Typical electric field strengths at which carrier velocity saturates is usually on the order of 10-100 kV/cm. Both saturation field and the saturation velocity of a semiconductor material are typically strong function of impurities, crystal defects and temperature.For extremely small scale devices, where the high-field regions may be comparable or smaller than the average mean free path of the charge carrier, one can observe velocity overshoot, or hot electron effects which has become more important as the transistor geometries continually decrease to enable design of faster, larger and more dense integrated circuits. The regime where the two terminals between which the electron moves is much smaller than the mean free path, is sometimes referred as ballistic transport. There have been numerous attempts in the past to build transistors based on this principle without much success. Nevertheless, developing field of nanotechnology, and new materials such as Carbon nanotubes and graphene, offers new hope.Though in a semiconductor such as Si saturation velocity of a carrier is same as the peak velocity of the carrier, for some other materials with more complex energy band structures, this is not true. In GaAs or InP for example the carrier drift velocity reaches to a maximum as a function of field and then it begins to actually decrease as the electric field applied is increased further. Carriers which have gained enough energy are kicked up to a different conduction band which presents a lower drift velocity and eventually a lower saturation velocity in these materials. This results in an overall decrease of current for higher voltage until all electrons are in the "slow" band and this is the principle behind operation of a Gunn diode, which can display negative differential resistivity. Due to the transfer of electrons to a different conduction band involved, such devices, usually single terminal, are referred to as Transferred electron devices, or TEDs.".
- Saturation_velocity wikiPageID "25225297".
- Saturation_velocity wikiPageLength "4108".
- Saturation_velocity wikiPageOutDegree "32".
- Saturation_velocity wikiPageRevisionID "581792523".
- Saturation_velocity wikiPageWikiLink Ballistic_conduction.
- Saturation_velocity wikiPageWikiLink Ballistic_transport.
- Saturation_velocity wikiPageWikiLink Carbon.
- Saturation_velocity wikiPageWikiLink Carbon_nanotube.
- Saturation_velocity wikiPageWikiLink Category:Charge_carriers.
- Saturation_velocity wikiPageWikiLink Category:Concepts_in_physics.
- Saturation_velocity wikiPageWikiLink Category:Transistors.
- Saturation_velocity wikiPageWikiLink Charge_carrier.
- Saturation_velocity wikiPageWikiLink Conduction_band.
- Saturation_velocity wikiPageWikiLink Crystal_defect.
- Saturation_velocity wikiPageWikiLink Crystallographic_defect.
- Saturation_velocity wikiPageWikiLink Drift_speed.
- Saturation_velocity wikiPageWikiLink Drift_velocity.
- Saturation_velocity wikiPageWikiLink Electric_field.
- Saturation_velocity wikiPageWikiLink Electrical_conductor.
- Saturation_velocity wikiPageWikiLink Electrical_mobility.
- Saturation_velocity wikiPageWikiLink Electron.
- Saturation_velocity wikiPageWikiLink Electronic_band_structure.
- Saturation_velocity wikiPageWikiLink Energy_band.
- Saturation_velocity wikiPageWikiLink Field-effect_transistor.
- Saturation_velocity wikiPageWikiLink Field_effect_transistors.
- Saturation_velocity wikiPageWikiLink Field_strength.
- Saturation_velocity wikiPageWikiLink GaAs.
- Saturation_velocity wikiPageWikiLink Gallium_arsenide.
- Saturation_velocity wikiPageWikiLink Graphene.
- Saturation_velocity wikiPageWikiLink Gunn_diode.
- Saturation_velocity wikiPageWikiLink Hot-carrier_injection.
- Saturation_velocity wikiPageWikiLink Hot_electron.
- Saturation_velocity wikiPageWikiLink InP.
- Saturation_velocity wikiPageWikiLink Indium_phosphide.
- Saturation_velocity wikiPageWikiLink Integrated_circuit.
- Saturation_velocity wikiPageWikiLink Integrated_circuits.
- Saturation_velocity wikiPageWikiLink Mean_free_path.
- Saturation_velocity wikiPageWikiLink Nanotechnology.
- Saturation_velocity wikiPageWikiLink Semiconductor.
- Saturation_velocity wikiPageWikiLink SiC.
- Saturation_velocity wikiPageWikiLink Silicon.
- Saturation_velocity wikiPageWikiLink Silicon_carbide.
- Saturation_velocity wikiPageWikiLink Transferred_electron_device.
- Saturation_velocity wikiPageWikiLink Transistor.
- Saturation_velocity wikiPageWikiLink Transistors.
- Saturation_velocity wikiPageWikiLink Valence_and_conduction_bands.
- Saturation_velocity wikiPageWikiLink Velocity_overshoot.
- Saturation_velocity wikiPageWikiLinkText "Saturation velocity".
- Saturation_velocity wikiPageWikiLinkText "saturated electron velocity".
- Saturation_velocity wikiPageWikiLinkText "saturation velocity".
- Saturation_velocity hasPhotoCollection Saturation_velocity.
- Saturation_velocity wikiPageUsesTemplate Template:Merge_to.
- Saturation_velocity wikiPageUsesTemplate Template:Reflist.
- Saturation_velocity subject Category:Charge_carriers.
- Saturation_velocity subject Category:Concepts_in_physics.
- Saturation_velocity subject Category:Transistors.
- Saturation_velocity hypernym Velocity.
- Saturation_velocity type Concept.
- Saturation_velocity type Physic.
- Saturation_velocity type Semiconductor.
- Saturation_velocity type Transistor.
- Saturation_velocity comment "Saturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as mobility of the carrier, which is a material property.".
- Saturation_velocity label "Saturation velocity".
- Saturation_velocity sameAs m.0b6hq4d.
- Saturation_velocity sameAs Q7426597.
- Saturation_velocity sameAs Q7426597.
- Saturation_velocity wasDerivedFrom Saturation_velocity?oldid=581792523.
- Saturation_velocity isPrimaryTopicOf Saturation_velocity.