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- Multi-threshold_CMOS abstract "Multi-threshold CMOS (MTCMOS) is a variation of CMOS chip technology which has transistors with multiple threshold voltages (Vth) in order to optimize delay or power. The Vth of a MOSFET is the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. Low Vth devices switch faster, and are therefore useful on critical delay paths to minimize clock periods. The penalty is that low Vth devices have substantially higher static leakage power. High Vth devices are used on non-critical paths to reduce static leakage power without incurring a delay penalty. Typical high Vth devices reduce static leakage by 10 times compared with low Vth devices.One method of creating devices with multiple threshold voltages is to apply different bias voltages (Vb) to the base or bulk terminal of the transistors. Other methods involve adjusting the gate oxide thickness, gate oxide dielectric constant (material type), or dopant concentration in the channel region beneath the gate oxide. A common method of fabricating multi-threshold CMOS involves simply adding additional photolithography and ion implantation steps. For a given fabrication process, the Vth is adjusted by altering the concentration of dopant atoms in the channel region beneath the gate oxide. Typically, the concentration is adjusted by ion implantation method. For example, photolithography methods are applied to cover all devices except the p-MOSFETs with photoresist. Ion implantation is then completed, with ions of the chosen dopant type penetrating the gate oxide in areas where no photoresist is present. The photoresist is then stripped. Photolithography methods are again applied to cover all devices except the n-MOSFETs. Another implantation is then completed using a different dopant type, with ions penetrating the gate oxide. The photoresist is stripped. At some point during the subsequent fabrication process, implanted ions are activated by annealing at an elevated temperature.In principle, any number of threshold voltage transistors can be produced. For CMOS having two threshold voltages, one additional photomasking and implantation step is required for each of p-MOSFET and n-MOSFET. For fabrication of normal, low, and high Vth CMOS, four additional steps are required relative to conventional single-Vth CMOS.".
- Multi-threshold_CMOS wikiPageID "9179644".
- Multi-threshold_CMOS wikiPageLength "6580".
- Multi-threshold_CMOS wikiPageOutDegree "25".
- Multi-threshold_CMOS wikiPageRevisionID "631580078".
- Multi-threshold_CMOS wikiPageWikiLink Boolean_algebra.
- Multi-threshold_CMOS wikiPageWikiLink CMOS.
- Multi-threshold_CMOS wikiPageWikiLink Category:Digital_electronics.
- Multi-threshold_CMOS wikiPageWikiLink Category:Electronic_design.
- Multi-threshold_CMOS wikiPageWikiLink Category:Logic_families.
- Multi-threshold_CMOS wikiPageWikiLink Depletion_region.
- Multi-threshold_CMOS wikiPageWikiLink Dielectric.
- Multi-threshold_CMOS wikiPageWikiLink Dopant.
- Multi-threshold_CMOS wikiPageWikiLink Electric_power.
- Multi-threshold_CMOS wikiPageWikiLink Electrical_network.
- Multi-threshold_CMOS wikiPageWikiLink Gate_oxide.
- Multi-threshold_CMOS wikiPageWikiLink Integrated_circuit.
- Multi-threshold_CMOS wikiPageWikiLink Inversion_layer_(semiconductors).
- Multi-threshold_CMOS wikiPageWikiLink Ion_implantation.
- Multi-threshold_CMOS wikiPageWikiLink Logic_gate.
- Multi-threshold_CMOS wikiPageWikiLink MOSFET.
- Multi-threshold_CMOS wikiPageWikiLink Photolithography.
- Multi-threshold_CMOS wikiPageWikiLink Power_supply.
- Multi-threshold_CMOS wikiPageWikiLink Power_supply_rail.
- Multi-threshold_CMOS wikiPageWikiLink Power_supply_unit_(computer).
- Multi-threshold_CMOS wikiPageWikiLink Sleep_mode.
- Multi-threshold_CMOS wikiPageWikiLink Switch.
- Multi-threshold_CMOS wikiPageWikiLink Threshold_voltage.
- Multi-threshold_CMOS wikiPageWikiLink Transistor.
- Multi-threshold_CMOS wikiPageWikiLinkText "Multi-threshold CMOS".
- Multi-threshold_CMOS wikiPageWikiLinkText "Multi-threshold voltage designs".
- Multi-threshold_CMOS wikiPageWikiLinkText "multi-threshold CMOS".
- Multi-threshold_CMOS hasPhotoCollection Multi-threshold_CMOS.
- Multi-threshold_CMOS wikiPageUsesTemplate Template:Clarify.
- Multi-threshold_CMOS wikiPageUsesTemplate Template:Confusing_section.
- Multi-threshold_CMOS wikiPageUsesTemplate Template:Reflist.
- Multi-threshold_CMOS subject Category:Digital_electronics.
- Multi-threshold_CMOS subject Category:Electronic_design.
- Multi-threshold_CMOS subject Category:Logic_families.
- Multi-threshold_CMOS hypernym Variation.
- Multi-threshold_CMOS type Article.
- Multi-threshold_CMOS type Food.
- Multi-threshold_CMOS type Article.
- Multi-threshold_CMOS type Circuit.
- Multi-threshold_CMOS comment "Multi-threshold CMOS (MTCMOS) is a variation of CMOS chip technology which has transistors with multiple threshold voltages (Vth) in order to optimize delay or power. The Vth of a MOSFET is the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. Low Vth devices switch faster, and are therefore useful on critical delay paths to minimize clock periods.".
- Multi-threshold_CMOS label "Multi-threshold CMOS".
- Multi-threshold_CMOS sameAs m.027_c89.
- Multi-threshold_CMOS sameAs Q6934506.
- Multi-threshold_CMOS sameAs Q6934506.
- Multi-threshold_CMOS wasDerivedFrom Multi-threshold_CMOS?oldid=631580078.
- Multi-threshold_CMOS isPrimaryTopicOf Multi-threshold_CMOS.