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- Buffered_oxide_etch abstract "Buffered oxide etch (BOE), also known as buffered HF or BHF, is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF (typically 49% HF in water) etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning. Buffered oxide etch is commonly used for more controllable etching.Some oxides produce insoluble products in HF solutions. Thus, HCl is often added to BHF solutions in order to dissolve these insoluble products and produce a higher quality etch.A common buffered oxide etch solution comprises a 6:1 volume ratio of 40% NH4F in water to 49% HF in water. This solution will etch thermally grown oxide at approximately 2 nanometres per second at 25 degrees Celsius. Temperature can be increased to raise the etching rate. Continuous stirring of the solution during etching process helps to have homogeneous solution which may etch uniformly by removing etched material from the surface.".
- Buffered_oxide_etch wikiPageID "12009244".
- Buffered_oxide_etch wikiPageLength "1990".
- Buffered_oxide_etch wikiPageOutDegree "9".
- Buffered_oxide_etch wikiPageRevisionID "603747054".
- Buffered_oxide_etch wikiPageWikiLink Ammonium_fluoride.
- Buffered_oxide_etch wikiPageWikiLink Buffering_agent.
- Buffered_oxide_etch wikiPageWikiLink Category:Etching_(microfabrication).
- Buffered_oxide_etch wikiPageWikiLink Etching_(microfabrication).
- Buffered_oxide_etch wikiPageWikiLink Hydrofluoric_acid.
- Buffered_oxide_etch wikiPageWikiLink Microfabrication.
- Buffered_oxide_etch wikiPageWikiLink Silicon_dioxide.
- Buffered_oxide_etch wikiPageWikiLink Silicon_nitride.
- Buffered_oxide_etch wikiPageWikiLink Thin_film.
- Buffered_oxide_etch wikiPageWikiLinkText "Buffered oxide etch".
- Buffered_oxide_etch wikiPageWikiLinkText "buffered oxide etch".
- Buffered_oxide_etch hasPhotoCollection Buffered_oxide_etch.
- Buffered_oxide_etch wikiPageUsesTemplate Template:Reflist.
- Buffered_oxide_etch subject Category:Etching_(microfabrication).
- Buffered_oxide_etch hypernym Etchant.
- Buffered_oxide_etch comment "Buffered oxide etch (BOE), also known as buffered HF or BHF, is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF (typically 49% HF in water) etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.".
- Buffered_oxide_etch label "Buffered oxide etch".
- Buffered_oxide_etch sameAs Buffered_oxide_etch.
- Buffered_oxide_etch sameAs m.02vlth6.
- Buffered_oxide_etch sameAs Q2927645.
- Buffered_oxide_etch sameAs Q2927645.
- Buffered_oxide_etch wasDerivedFrom Buffered_oxide_etch?oldid=603747054.
- Buffered_oxide_etch isPrimaryTopicOf Buffered_oxide_etch.