Matches in DBpedia 2016-04 for { <http://doi.org/10.1016/s0022-0248(98)00476-x> ?p ?o }
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- s0022-0248(98)00476-x date "1998-09-15".
- s0022-0248(98)00476-x doi "10.1016/S0022-024800476-X".
- s0022-0248(98)00476-x first "Xianglin".
- s0022-0248(98)00476-x first2 "Da-Cheng".
- s0022-0248(98)00476-x first3 "Lianshan".
- s0022-0248(98)00476-x first4 "Xiaohui".
- s0022-0248(98)00476-x first5 "Du".
- s0022-0248(98)00476-x first6 "Lanying".
- s0022-0248(98)00476-x isCitedBy Lanying_Lin.
- s0022-0248(98)00476-x issue "1–2".
- s0022-0248(98)00476-x journal "Journal of Crystal Growth".
- s0022-0248(98)00476-x last "Liu".
- s0022-0248(98)00476-x last2 "Lu".
- s0022-0248(98)00476-x last3 "Wang".
- s0022-0248(98)00476-x last4 "Wang".
- s0022-0248(98)00476-x last5 "Wang".
- s0022-0248(98)00476-x last6 "Lin".
- s0022-0248(98)00476-x pages "23–27".
- s0022-0248(98)00476-x title "The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy".
- s0022-0248(98)00476-x url "http://www.sciencedirect.com/science/article/pii/S002202489800476X".
- s0022-0248(98)00476-x volume "193".