Matches in DBpedia 2016-04 for { <http://doi.org/10.1016/s0022-0248(98)00264-4> ?p ?o }
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- s0022-0248(98)00264-4 date "1998-06-15".
- s0022-0248(98)00264-4 doi "10.1016/S0022-024800264-4".
- s0022-0248(98)00264-4 first "Xianglin".
- s0022-0248(98)00264-4 first2 "Lianshan".
- s0022-0248(98)00264-4 first3 "Da-Cheng".
- s0022-0248(98)00264-4 first4 "Du".
- s0022-0248(98)00264-4 first5 "Xiaohui".
- s0022-0248(98)00264-4 first6 "Lanying".
- s0022-0248(98)00264-4 isCitedBy Lanying_Lin.
- s0022-0248(98)00264-4 journal "Journal of Crystal Growth".
- s0022-0248(98)00264-4 last "Liu".
- s0022-0248(98)00264-4 last2 "Wang".
- s0022-0248(98)00264-4 last3 "Lu".
- s0022-0248(98)00264-4 last4 "Wang".
- s0022-0248(98)00264-4 last5 "Wang".
- s0022-0248(98)00264-4 last6 "Lin".
- s0022-0248(98)00264-4 pages "287–290".
- s0022-0248(98)00264-4 title "The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy".
- s0022-0248(98)00264-4 url "http://www.sciencedirect.com/science/article/pii/S0022024898002644".
- s0022-0248(98)00264-4 volume "189–190".