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- QBD_(electronics) abstract "QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total accumulated charge passing through the dielectric layer just before failure. Thus QBD is a measure of time-dependent gate oxide breakdown. As a measure of oxide quality, QBD can also be a useful predictor of product reliability under specified electrical stress conditions.".
- QBD_(electronics) wikiPageID "1395171".
- QBD_(electronics) wikiPageLength "2702".
- QBD_(electronics) wikiPageOutDegree "20".
- QBD_(electronics) wikiPageRevisionID "537528640".
- QBD_(electronics) wikiPageWikiLink Ammeter.
- QBD_(electronics) wikiPageWikiLink Avalanche_breakdown.
- QBD_(electronics) wikiPageWikiLink Capacitor.
- QBD_(electronics) wikiPageWikiLink Category:Semiconductor_device_defects.
- QBD_(electronics) wikiPageWikiLink Constant_current.
- QBD_(electronics) wikiPageWikiLink Cumulative_distribution_function.
- QBD_(electronics) wikiPageWikiLink Current_source.
- QBD_(electronics) wikiPageWikiLink Destructive_testing.
- QBD_(electronics) wikiPageWikiLink Dielectric.
- QBD_(electronics) wikiPageWikiLink Electric_charge.
- QBD_(electronics) wikiPageWikiLink Electrical_breakdown.
- QBD_(electronics) wikiPageWikiLink Field_electron_emission.
- QBD_(electronics) wikiPageWikiLink Gate_oxide.
- QBD_(electronics) wikiPageWikiLink Integral.
- QBD_(electronics) wikiPageWikiLink MOSFET.
- QBD_(electronics) wikiPageWikiLink Reliability_(semiconductor).
- QBD_(electronics) wikiPageWikiLink Semiconductor.
- QBD_(electronics) wikiPageWikiLink Time-dependent_gate_oxide_breakdown.
- QBD_(electronics) wikiPageWikiLink Voltage.
- QBD_(electronics) wikiPageWikiLink Weibull_chart.
- QBD_(electronics) wikiPageWikiLink Weibull_distribution.
- QBD_(electronics) wikiPageWikiLinkText "QBD (electronics)".
- QBD_(electronics) hasPhotoCollection QBD_(electronics).
- QBD_(electronics) wikiPageUsesTemplate Template:Electronics-stub.
- QBD_(electronics) wikiPageUsesTemplate Template:Reflist.
- QBD_(electronics) subject Category:Semiconductor_device_defects.
- QBD_(electronics) hypernym Term.
- QBD_(electronics) comment "QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total accumulated charge passing through the dielectric layer just before failure. Thus QBD is a measure of time-dependent gate oxide breakdown. As a measure of oxide quality, QBD can also be a useful predictor of product reliability under specified electrical stress conditions.".
- QBD_(electronics) label "QBD (electronics)".
- QBD_(electronics) sameAs m.04z5q2.
- QBD_(electronics) sameAs Q7265381.
- QBD_(electronics) sameAs Q7265381.
- QBD_(electronics) wasDerivedFrom QBD_(electronics)?oldid=537528640.
- QBD_(electronics) isPrimaryTopicOf QBD_(electronics).