Matches in DBpedia 2015-10 for { ?s ?p "The argon fluoride laser (ArF laser) is a particular type of excimer laser, which is sometimes (more correctly) called an exciplex laser. With its 193 nanometer wavelength, it is a deep ultraviolet laser, which is commonly used in the production of semiconductor integrated circuits, eye surgery, micromachining, and scientific research. The term excimer is short for "excited dimer", while exciplex is short for "excited complex". An excimer laser typically uses a mixture of a noble gas (argon, krypton, or xenon) and a halogen gas (fluorine or chlorine), which under suitable conditions of electrical stimulation and high pressure, emits coherent stimulated radiation (laser light) in the ultraviolet range.ArF (and KrF) excimer lasers are widely used in high-resolution photolithography machines, one of the critical technologies required for microelectronic chip manufacturing. Excimer laser lithography has enabled transistor feature sizes to shrink from 800 nanometers in 1990 to 22 nanometers in 2012."@en }
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- Argon_fluoride_laser abstract "The argon fluoride laser (ArF laser) is a particular type of excimer laser, which is sometimes (more correctly) called an exciplex laser. With its 193 nanometer wavelength, it is a deep ultraviolet laser, which is commonly used in the production of semiconductor integrated circuits, eye surgery, micromachining, and scientific research. The term excimer is short for "excited dimer", while exciplex is short for "excited complex". An excimer laser typically uses a mixture of a noble gas (argon, krypton, or xenon) and a halogen gas (fluorine or chlorine), which under suitable conditions of electrical stimulation and high pressure, emits coherent stimulated radiation (laser light) in the ultraviolet range.ArF (and KrF) excimer lasers are widely used in high-resolution photolithography machines, one of the critical technologies required for microelectronic chip manufacturing. Excimer laser lithography has enabled transistor feature sizes to shrink from 800 nanometers in 1990 to 22 nanometers in 2012.".