Matches in DBpedia 2015-10 for { ?s ?p "The 22 nanometer (22 nm) node is the process step following the 32 nm in CMOS semiconductor device fabrication. The typical half-pitch (i.e., half the distance between identical features in an array) for a memory cell using the process is around 22 nm. It was first introduced by semiconductor companies in 2008 for use in memory products, while first consumer-level CPU deliveries started in April 2012.The ITRS 2006 Front End Process Update indicates that equivalent physical oxide thickness will not scale below 0.5 nm (about twice the diameter of a silicon atom), which is the expected value at the 22 nm node. This is an indication that CMOS scaling in this area has reached a wall at this point, possibly disturbing Moore's law.On the ITRS roadmap, the successor to 22 nm technology will be 14 nm technology."@en }
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- 22_nanometer abstract "The 22 nanometer (22 nm) node is the process step following the 32 nm in CMOS semiconductor device fabrication. The typical half-pitch (i.e., half the distance between identical features in an array) for a memory cell using the process is around 22 nm. It was first introduced by semiconductor companies in 2008 for use in memory products, while first consumer-level CPU deliveries started in April 2012.The ITRS 2006 Front End Process Update indicates that equivalent physical oxide thickness will not scale below 0.5 nm (about twice the diameter of a silicon atom), which is the expected value at the 22 nm node. This is an indication that CMOS scaling in this area has reached a wall at this point, possibly disturbing Moore's law.On the ITRS roadmap, the successor to 22 nm technology will be 14 nm technology.".